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Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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STMicroelectronics | Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 995 |
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$2.0800 / $3.4100 | Buy Now |
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Future Electronics | N-Channel 55 V 0.008 Ohm 150 nC 300 W Flange Mount Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.7400 / $1.9100 | Buy Now |
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Future Electronics | N-Channel 55 V 0.008 Ohm 150 nC 300 W Flange Mount Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.7400 / $1.9100 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 63 |
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$1.9133 / $3.4788 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 2 |
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$1.5000 / $2.3100 | Buy Now |
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STP85NF55
STMicroelectronics
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Datasheet
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STP85NF55
STMicroelectronics
Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 980 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP85NF55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP85NF55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STB85NF55LT4 | N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package | STMicroelectronics | STP85NF55 vs STB85NF55LT4 |
IPB80N06S209XT | Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STP85NF55 vs IPB80N06S209XT |
IPB80N06S2-09 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STP85NF55 vs IPB80N06S2-09 |
SP0000-82518 | Power Field-Effect Transistor | Infineon Technologies AG | STP85NF55 vs SP0000-82518 |
STB85NF55 | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | STP85NF55 vs STB85NF55 |
IPP80N06S2-09 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP85NF55 vs IPP80N06S2-09 |
IPB80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STP85NF55 vs IPB80N06S2L-06 |
STB85NF55L | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | STP85NF55 vs STB85NF55L |
IPP80N06S209AKSA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP85NF55 vs IPP80N06S209AKSA1 |
SPB80N06S08ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STP85NF55 vs SPB80N06S08ATMA1 |