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Transistors / Power Field-Effect Transistors / STP4NK60Z
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STP4NK60Z by:

N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package

Part Details for STP4NK60Z by STMicroelectronics

Overview of STP4NK60Z by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP4NK60Z

Part # Distributor Description Stock Price Buy
DISTI # 26M3692
Newark Mosfet, N, To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Power Dissipation:70W Rohs Compliant: Yes |Stmicroelectronics STP4NK60Z Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 581
  • 1 $1.8100
  • 10 $1.4700
  • 100 $1.2100
  • 500 $1.0000
  • 1,000 $0.8770
  • 2,500 $0.7290
  • 10,000 $0.6840
$0.6840 / $1.8100 Buy Now
DISTI # 497-3191-5-ND
DigiKey MOSFET N-CH 600V 4A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube 878
In Stock
  • 1 $1.6600
  • 50 $1.3314
  • 100 $1.0954
  • 500 $0.9269
  • 1,000 $0.7865
  • 2,000 $0.7471
  • 5,000 $0.7191
  • 10,000 $0.6953
$0.6953 / $1.6600 Buy Now
DISTI # STP4NK60Z
Avnet Americas Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: STP4NK60Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.7055
  • 4,000 $0.6910
  • 6,000 $0.6764
$0.6764 / $0.7055 Buy Now
DISTI # 511-STP4NK60Z
Mouser Electronics MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS: Compliant 1863
  • 1 $1.6600
  • 10 $0.9080
  • 100 $0.8690
  • 250 $0.8570
  • 500 $0.8080
  • 1,000 $0.6950
  • 10,000 $0.6780
$0.6780 / $1.6600 Buy Now
STMicroelectronics N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 1863
  • 1 $1.6300
  • 10 $0.8900
  • 100 $0.8500
  • 250 $0.8400
  • 500 $0.7900
$0.7900 / $1.6300 Buy Now
Future Electronics N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 3000
Tube
  • 50 $0.7950
  • 250 $0.7550
  • 1,000 $0.7200
  • 2,500 $0.7000
  • 6,250 $0.6650
$0.6650 / $0.7950 Buy Now
Future Electronics N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 2000
Tube
  • 50 $0.7900
  • 200 $0.7550
  • 750 $0.7200
  • 2,000 $0.7000
  • 5,000 $0.6650
$0.6650 / $0.7900 Buy Now
Future Electronics N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.7150
  • 2,000 $0.7000
  • 3,000 $0.6900
  • 4,000 $0.6850
  • 5,000 $0.6650
$0.6650 / $0.7150 Buy Now
Future Electronics N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.7150
  • 2,000 $0.7000
  • 3,000 $0.6900
  • 4,000 $0.6850
  • 5,000 $0.6650
$0.6650 / $0.7150 Buy Now
Future Electronics N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.7200
  • 2,000 $0.7050
  • 3,000 $0.7000
  • 5,000 $0.6850
  • 10,000 $0.6650
$0.6650 / $0.7200 Buy Now
DISTI # 69707295
Verical Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 50 Package Multiple: 50 Date Code: 2330 Americas - 2550
  • 50 $0.5464
  • 100 $0.5344
  • 250 $0.5334
  • 500 $0.5200
  • 1,000 $0.4722
  • 10,000 $0.4685
$0.4685 / $0.5464 Buy Now
Bristol Electronics   186
RFQ
DISTI # STP4NK60Z
Avnet Americas Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: STP4NK60Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.7055
  • 4,000 $0.6910
  • 6,000 $0.6764
$0.6764 / $0.7055 Buy Now
DISTI # STP4NK60Z
TME Transistor: N-MOSFET, unipolar, 600V, 2.5A, 70W, TO220-3 Min Qty: 1 160
  • 1 $1.0420
  • 3 $0.7870
  • 10 $0.6390
  • 50 $0.5810
  • 250 $0.5430
$0.5430 / $1.0420 Buy Now
ComSIT USA 600 V, 4 A, 1.76 OHM N-CHANNEL SUPERMESH POWER MOSFET IN TO-220 Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 150
RFQ
DISTI # STP4NK60Z
Avnet Silica Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R (Alt: STP4NK60Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days Silica - 1800
Buy Now
Chip1Cloud MOSFET N-CH 600V 4A TO-220 17000
RFQ
DISTI # STP4NK60Z
EBV Elektronik Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R (Alt: STP4NK60Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 9803203
element14 Asia-Pacific MOSFET, N, TO-220 RoHS: Compliant Min Qty: 1 Container: Each 581
  • 1 $1.7477
  • 10 $1.0988
  • 100 $0.9365
  • 500 $0.8923
  • 1,000 $0.7330
  • 5,000 $0.7190
$0.7190 / $1.7477 Buy Now
DISTI # 9803203
Farnell MOSFET, N, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 581
  • 1 $1.8720
  • 10 $1.4102
  • 100 $1.0583
  • 500 $0.9160
  • 1,000 $0.7625
  • 5,000 $0.7213
$0.7213 / $1.8720 Buy Now
DISTI # STP4NK60Z
Maritex Transistor: N-MOSFET, unipolar, 600V, 4A, 2ohm, 70W, -55+150 deg.C, THT, TO220 Min Qty: 1 Package Multiple: 1 442
  • 1 $0.8380
  • 25 $0.7960
  • 50 $0.7540
  • 250 $0.7130
  • 500 $0.6460
$0.6460 / $0.8380 Buy Now

Part Details for STP4NK60Z

STP4NK60Z CAD Models

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STP4NK60Z Part Data Attributes:

Parametric Data
STP4NK60Z STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP4NK60Z STMicroelectronics N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP4NK60Z

This table gives cross-reference parts and alternative options found for STP4NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP4NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STP4NK60Z vs NDB706AL
IRFS620 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor STP4NK60Z vs IRFS620
FQA30N40 Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fairchild Semiconductor Corporation STP4NK60Z vs FQA30N40
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG STP4NK60Z vs IPD90N06S306ATMA1
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP4NK60Z vs SPB80N06S2-07
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STP4NK60Z vs IXFH30N40Q
SSH60N08 Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor STP4NK60Z vs SSH60N08
NDP605BE TRANSISTOR 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power National Semiconductor Corporation STP4NK60Z vs NDP605BE
STW29NK50Z 31A, 500V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics STP4NK60Z vs STW29NK50Z
RF1S17N06LSM Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor STP4NK60Z vs RF1S17N06LSM

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