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Part Details for STP4NK60Z by STMicroelectronics
Overview of STP4NK60Z by STMicroelectronics
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STP4NK60Z
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3692
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Newark | Mosfet, N, To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Power Dissipation:70W Rohs Compliant: Yes |Stmicroelectronics STP4NK60Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 561 |
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$0.6250 / $1.1600 | Buy Now |
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DISTI #
497-3191-5-ND
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DigiKey | MOSFET N-CH 600V 4A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
552 In Stock |
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$0.6953 / $2.4500 | Buy Now |
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DISTI #
STP4NK60Z
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Avnet Americas | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: STP4NK60Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$0.7027 / $0.7379 | Buy Now |
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DISTI #
511-STP4NK60Z
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Mouser Electronics | MOSFETs N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS: Compliant | 1440 |
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$0.6910 / $1.1600 | Buy Now |
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DISTI #
E02:0323_00210253
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Arrow Electronics | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks Date Code: 2423 | Europe - 1650 |
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$0.6332 / $0.8379 | Buy Now |
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STMicroelectronics | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 1790 |
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$0.6800 / $1.1400 | Buy Now |
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Future Electronics | N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 4000Tube |
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$0.6350 / $0.7600 | Buy Now |
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Future Electronics | N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 2000Tube |
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$0.6350 / $0.7550 | Buy Now |
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Future Electronics | N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks Container: Tube | 0Tube |
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$0.6350 / $0.6850 | Buy Now |
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Future Electronics | N-Channel 600 V 2 Ω SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks Container: Tube | 0Tube |
|
$0.6350 / $0.6850 | Buy Now |
Part Details for STP4NK60Z
STP4NK60Z CAD Models
STP4NK60Z Part Data Attributes
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STP4NK60Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP4NK60Z
STMicroelectronics
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP4NK60Z
This table gives cross-reference parts and alternative options found for STP4NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP4NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP4NK60Z vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP4NK60Z vs IPB80N06S2LH5ATMA1 |
| FQA11N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN | STP4NK60Z vs FQA11N90 |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | STP4NK60Z vs FQAF7N80 |
| SPP80N03S2L-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | STP4NK60Z vs SPP80N03S2L-05 |
| NDP7050L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP4NK60Z vs NDP7050L |
| FQAF65N06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | STP4NK60Z vs FQAF65N06 |
| FDP14N60 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP4NK60Z vs FDP14N60 |
| IXFH32N50 | IXYS Corporation | $1.1612 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | STP4NK60Z vs IXFH32N50 |
| IXFX66N50Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | STP4NK60Z vs IXFX66N50Q2 |