There are no models available for this part yet.
Overview of STP3NB80 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for STP3NB80 by STMicroelectronics
Part Data Attributes for STP3NB80 by STMicroelectronics
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
Part Package Code
|
TO-220AB
|
Package Description
|
TO-220, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
176 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
800 V
|
Drain Current-Max (ID)
|
2.6 A
|
Drain-source On Resistance-Max
|
6.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
90 W
|
Pulsed Drain Current-Max (IDM)
|
10.4 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for STP3NB80
This table gives cross-reference parts and alternative options found for STP3NB80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP3NB80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STP7NK40Z | N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package | STMicroelectronics | STP3NB80 vs STP7NK40Z |
IXFK100N25 | Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | STP3NB80 vs IXFK100N25 |
FQP5P20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP3NB80 vs FQP5P20 |
IXFH16N50P3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | STP3NB80 vs IXFH16N50P3 |
FQP6N60C | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP3NB80 vs FQP6N60C |
STW10NK80Z | N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | STMicroelectronics | STP3NB80 vs STW10NK80Z |
IXFK60N55Q2 | Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | STP3NB80 vs IXFK60N55Q2 |
IRLSZ34 | Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STP3NB80 vs IRLSZ34 |
IRFP250B | Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STP3NB80 vs IRFP250B |
IXFH20N60Q | Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | STP3NB80 vs IXFH20N60Q |