There are no models available for this part yet.
Overview of STK14N05(SOT-194) by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
7UL2T125FK | Toshiba Electronic Devices & Storage Corporation | One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC | |
TC75S102F | Toshiba Electronic Devices & Storage Corporation | Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | |
7UL2T126FK | Toshiba Electronic Devices & Storage Corporation | One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC |
CAD Models for STK14N05(SOT-194) by STMicroelectronics
Part Data Attributes for STK14N05(SOT-194) by STMicroelectronics
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|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
Package Description
|
FLANGE MOUNT, R-PSFM-G3
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Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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HTS Code
|
8541.29.00.95
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Avalanche Energy Rating (Eas)
|
35 mJ
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Case Connection
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ISOLATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
50 V
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Drain Current-Max (ID)
|
14 A
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Drain-source On Resistance-Max
|
0.12 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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150 pF
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JESD-30 Code
|
R-PSFM-G3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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50 W
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Pulsed Drain Current-Max (IDM)
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56 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
|
GULL WING
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Terminal Position
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SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
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Turn-on Time-Max (ton)
|
165 ns
|