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N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89W1475
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Newark | Lv Mosfet Trench |Stmicroelectronics STH310N10F7-6 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
98Y2480
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Newark | Mosfet, N-Ch, 100V, 180A, H2Pak-6-7, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0019Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Stmicroelectronics STH310N10F7-6 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$4.0500 / $6.3300 | Buy Now |
DISTI #
497-13586-1-ND
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DigiKey | MOSFET N-CH 100V 180A H2PAK-6 Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$2.7453 / $6.7100 | Buy Now |
DISTI #
STH310N10F7-6
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Avnet Americas | Trans MOSFET N-CH 100V 180A 6-Pin H2PAK T/R - Tape and Reel (Alt: STH310N10F7-6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$2.7160 | Buy Now |
DISTI #
511-STH310N10F7-6
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Mouser Electronics | MOSFETs N-Ch 100 V 2.1 mOhm 180 A STripFET RoHS: Compliant | 647 |
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$2.7400 / $6.8500 | Buy Now |
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STMicroelectronics | N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package RoHS: Compliant Min Qty: 1 | 647 |
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$3.4000 / $6.7100 | Buy Now |
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Future Electronics | STH310N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H2PAK-6 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 2000Reel |
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$2.7000 | Buy Now |
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Future Electronics | STH310N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H2PAK-6 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
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$2.7000 | Buy Now |
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Future Electronics | STH310N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H2PAK-6 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
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$2.7000 | Buy Now |
DISTI #
36264833
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Verical | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Min Qty: 5 Package Multiple: 1 | Americas - 600 |
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$3.8125 / $6.9000 | Buy Now |
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STH310N10F7-6
STMicroelectronics
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Datasheet
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STH310N10F7-6
STMicroelectronics
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, H2PAK-7/6 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | ULTRA LOW RESISTANCE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 315 W | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STH310N10F7-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STH310N10F7-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB027N10N5E8187ATMA1 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | Infineon Technologies AG | STH310N10F7-6 vs IPB027N10N5E8187ATMA1 |
IPB027N10N3GXT | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STH310N10F7-6 vs IPB027N10N3GXT |
IPB027N10N5 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | Infineon Technologies AG | STH310N10F7-6 vs IPB027N10N5 |
IPB027N10N3GATMA1 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STH310N10F7-6 vs IPB027N10N3GATMA1 |