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Transistors / Power Field-Effect Transistors / STH310N10F7-2
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STH310N10F7-2 by: STMicroelectronics

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part Details for STH310N10F7-2 by STMicroelectronics

Overview of STH310N10F7-2 by STMicroelectronics

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Price & Stock for STH310N10F7-2

Part # Distributor Description Stock Price Buy
DISTI # 45AC7612
Newark Mosfet, N-Ch, 100V, 180A, H2Pak-2, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Stmicroelectronics STH310N10F7-2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $6.3000
  • 10 $5.3800
  • 25 $5.1100
  • 50 $4.7900
  • 100 $4.4600
  • 250 $4.2400
  • 500 $4.0200
$4.0200 / $6.3000 Buy Now
DISTI # 497-13585-1-ND
DigiKey MOSFET N-CH 100V 180A H2PAK-2 Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6996
In Stock
  • 1 $5.1800
  • 10 $4.3520
  • 100 $3.5211
  • 500 $3.1299
  • 1,000 $2.4210
$2.4210 / $5.1800 Buy Now
DISTI # STH310N10F7-2
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH310N10F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 5000
  • 1,000 $2.3086
$2.3086 Buy Now
DISTI # STH310N10F7-2
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH310N10F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $2.3086
$2.3086 Buy Now
DISTI # 511-STH310N10F7-2
Mouser Electronics MOSFETs N-CH 100V 2.1mOhm 180A STripFET VI RoHS: Compliant 10996
  • 1 $5.1800
  • 10 $4.3500
  • 25 $4.1000
  • 100 $3.5200
  • 250 $3.3200
  • 500 $3.1200
  • 1,000 $2.4200
$2.4200 / $5.1800 Buy Now
DISTI # V36:1790_06560869
Arrow Electronics Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Date Code: 2346 Americas - 2000
  • 1,000 $2.5780
$2.5780 Buy Now
STMicroelectronics N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package RoHS: Compliant Min Qty: 1 10996
  • 1 $5.0800
  • 10 $4.2600
  • 25 $4.0200
  • 100 $3.4500
  • 250 $3.2500
  • 500 $3.0600
$3.0600 / $5.0800 Buy Now
Future Electronics N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.3800
$2.3800 Buy Now
Future Electronics N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.3800
$2.3800 Buy Now
Future Electronics N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.5500
$2.5500 Buy Now
DISTI # 78403530
Verical Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2346 Americas - 2000
  • 1,000 $2.5780
$2.5780 Buy Now
DISTI # 32015460
Verical Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R Min Qty: 6 Package Multiple: 1 Americas - 800
  • 6 $6.2125
  • 10 $5.2125
  • 50 $4.9125
  • 100 $4.2125
  • 200 $4.0375
  • 500 $3.6875
$3.6875 / $6.2125 Buy Now
Bristol Electronics   5000
RFQ
Bristol Electronics   1558
RFQ
Quest Components 120A, 100V, 0.0025OHM, N-CHANNEL, SI, POWER, MOSFET 4000
  • 1 $6.3000
  • 258 $3.4650
  • 578 $3.1500
$3.1500 / $6.3000 Buy Now
Ameya Holding Limited N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2 1000
RFQ
DISTI # STH310N10F7-2
Avnet Silica Trans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R (Alt: STH310N10F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # C1S730200783420
Chip1Stop Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R RoHS: Compliant pbFree: Yes 2000
  • 1,000 $3.0600
$3.0600 Buy Now
DISTI # C1S730200783411
Chip1Stop Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 800
  • 1 $4.9700
  • 10 $4.1700
  • 50 $3.9300
  • 100 $3.3700
  • 200 $3.2300
  • 500 $2.9500
$2.9500 / $4.9700 Buy Now

Part Details for STH310N10F7-2

STH310N10F7-2 CAD Models

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STH310N10F7-2 Part Data Attributes

Parametric Data
STH310N10F7-2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STH310N10F7-2 STMicroelectronics N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, H2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 315 W
Pulsed Drain Current-Max (IDM) 720 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STH310N10F7-2

This table gives cross-reference parts and alternative options found for STH310N10F7-2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STH310N10F7-2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB027N10N5E8187ATMA1 Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Infineon Technologies AG STH310N10F7-2 vs IPB027N10N5E8187ATMA1
IPB027N10N3GXT Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STH310N10F7-2 vs IPB027N10N3GXT
IPB027N10N5 Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Infineon Technologies AG STH310N10F7-2 vs IPB027N10N5
IPB027N10N3GATMA1 Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STH310N10F7-2 vs IPB027N10N3GATMA1

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