Part Details for STGP18N40LZ by STMicroelectronics
Overview of STGP18N40LZ by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STGP18N40LZ
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 92 |
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ComSIT USA | EAS 180 MJ-390 V-INTERNALLY CLAMPED IGBT Insulated Gate Bipolar Transistor, 30A I(C), 420V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant | Europe - 400 |
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RFQ |
Part Details for STGP18N40LZ
STGP18N40LZ CAD Models
STGP18N40LZ Part Data Attributes
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STGP18N40LZ
STMicroelectronics
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Datasheet
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STGP18N40LZ
STMicroelectronics
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | VOLTAGE CLAMPING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 420 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Gate-Emitter Thr Voltage-Max | 2.3 V | |
| Gate-Emitter Voltage-Max | 16 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AUTOMOTIVE IGNITION | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 22200 ns | |
| Turn-on Time-Nom (ton) | 4450 ns |