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Part Details for STFW42N60M2-EP by STMicroelectronics
Overview of STFW42N60M2-EP by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Motor control systems
Price & Stock for STFW42N60M2-EP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STFW42N60M2-EP
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Avnet Americas | POWER MOSFET - Rail/Tube (Alt: STFW42N60M2-EP) RoHS: Compliant Min Qty: 300 Package Multiple: 300 Container: Tube | 0 |
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RFQ | |
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DISTI #
511-STFW42N60M2-EP
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Mouser Electronics | MOSFETs N-channel 600 V, 0.076 Ohm typ 34 A MDmesh M2 EP Power MOSFET RoHS: Compliant | 0 |
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Order Now | |
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STMicroelectronics | N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-3PF package RoHS: Compliant Min Qty: 1 | 288 |
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$6.4400 / $9.5800 | Buy Now |
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DISTI #
STFW42N60M2-EP
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Avnet Silica | POWER MOSFET (Alt: STFW42N60M2-EP) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STFW42N60M2-EP
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EBV Elektronik | POWER MOSFET (Alt: STFW42N60M2-EP) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STFW42N60M2-EP
STFW42N60M2-EP CAD Models
STFW42N60M2-EP Part Data Attributes
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STFW42N60M2-EP
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STFW42N60M2-EP
STMicroelectronics
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-3PF package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-3PF, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.087 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |