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Part Details for STD5NK40Z-1 by STMicroelectronics
Overview of STD5NK40Z-1 by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STD5NK40Z-1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3523
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Newark | Mosfet, N, I-Pak, Channel Type:N Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Power Dissipation:45W Rohs Compliant: Yes |Stmicroelectronics STD5NK40Z-1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 6445 |
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$0.4630 / $1.5800 | Buy Now |
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DISTI #
497-16199-5-ND
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DigiKey | MOSFET N-CH 400V 3A IPAK Min Qty: 1 Lead time: 13 Weeks Container: Tube |
2941 In Stock |
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$0.5884 / $1.1000 | Buy Now |
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DISTI #
STD5NK40Z-1
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Avnet Americas | Trans MOSFET N-CH 400V 3A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD5NK40Z-1) RoHS: Compliant Min Qty: 75 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$0.6143 / $0.6990 | Buy Now |
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DISTI #
511-STD5NK40Z-1
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Mouser Electronics | MOSFET N-Ch 400 Volt 3.0 A RoHS: Compliant | 850 |
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$0.5740 / $1.5700 | Buy Now |
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STMicroelectronics | N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 | 850 |
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$0.8300 / $1.5400 | Buy Now |
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Future Electronics | N-Channel 400 V 1.8 Ohm SuperMESH™Power MOSFET - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0Tube |
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$0.5750 / $0.6000 | Buy Now |
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Future Electronics | N-Channel 400 V 1.8 Ohm SuperMESH™Power MOSFET - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0Tube |
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$0.5750 / $0.6000 | Buy Now |
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Future Electronics | N-Channel 400 V 1.8 Ohm SuperMESH™Power MOSFET - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.5650 / $0.6700 | Buy Now |
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DISTI #
STD5NK40Z-1
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TME | Transistor: N-MOSFET, unipolar, 400V, 1.9A, 45W, I2PAK Min Qty: 1 | 8 |
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$0.5890 / $1.4090 | Buy Now |
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DISTI #
STD5NK40Z-1
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Avnet Silica | Trans MOSFET N-CH 400V 3A 3-Pin(3+Tab) IPAK Tube (Alt: STD5NK40Z-1) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days | Silica - 8100 |
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Buy Now |
Part Details for STD5NK40Z-1
STD5NK40Z-1 CAD Models
STD5NK40Z-1 Part Data Attributes:
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STD5NK40Z-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD5NK40Z-1
STMicroelectronics
N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-251 | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE ENERGY RATED | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11.5 pF | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 33.5 ns | |
| Turn-on Time-Max (ton) | 15.2 ns |
Alternate Parts for STD5NK40Z-1
This table gives cross-reference parts and alternative options found for STD5NK40Z-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD5NK40Z-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD5NK40Z-1 vs IRF610B_FP001 |
| FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD5NK40Z-1 vs FDP18N50 |
| PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | STD5NK40Z-1 vs PHD3055L |
| STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | STD5NK40Z-1 vs STH8NA60 |
| STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STD5NK40Z-1 vs STD3NA50T4 |
| IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD5NK40Z-1 vs IPP45N06S4L-08 |
| 934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | STD5NK40Z-1 vs 934057024118 |
| IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD5NK40Z-1 vs IRF620B |
| SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD5NK40Z-1 vs SPP80N06S2L-06 |
| STP75NF75 | N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package | STMicroelectronics | STD5NK40Z-1 vs STP75NF75 |