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Part Details for STD12NF06T4 by STMicroelectronics
Overview of STD12NF06T4 by STMicroelectronics
- Distributor Offerings: (28 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STD12NF06T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T3332
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Newark | Mosfet Transistor, N Channel, 12 A, 60 V, 0.08 Ohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STD12NF06T4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6537 |
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$0.5440 / $1.2300 | Buy Now |
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DISTI #
79AH6937
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Newark | Lgs Lv Mosfet Rohs Compliant: Yes |Stmicroelectronics STD12NF06T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4290 | Buy Now |
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DISTI #
497-3154-1-ND
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DigiKey | MOSFET N-CH 60V 12A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8692 In Stock |
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$0.4441 / $1.7700 | Buy Now |
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DISTI #
STD12NF06T4
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Avnet Americas | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD12NF06T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 287500 |
|
$0.4286 | Buy Now |
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DISTI #
STD12NF06T4
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Avnet Americas | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD12NF06T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 185000 |
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$0.4306 / $0.4521 | Buy Now |
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DISTI #
STD12NF06T4
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Avnet Americas | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD12NF06T4) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.4254 / $0.4521 | Buy Now |
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DISTI #
511-STD12NF06
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Mouser Electronics | MOSFETs N-Ch 60 Volt 12 Amp RoHS: Compliant | 1776 |
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$0.4440 / $1.1800 | Buy Now |
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DISTI #
V36:1790_06559803
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Arrow Electronics | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks Date Code: 2329 | Americas - 172500 |
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$0.2028 / $0.3014 | Buy Now |
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DISTI #
V72:2272_06559803
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Arrow Electronics | Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2318 Container: Cut Strips | Americas - 2986 |
|
$0.3044 / $0.4083 | Buy Now |
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STMicroelectronics | N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET RoHS: Compliant Min Qty: 1 | 1774 |
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$0.5300 / $1.1600 | Buy Now |
Part Details for STD12NF06T4
STD12NF06T4 CAD Models
STD12NF06T4 Part Data Attributes
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STD12NF06T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD12NF06T4
STMicroelectronics
N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD12NF06T4
This table gives cross-reference parts and alternative options found for STD12NF06T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD12NF06T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD12NF06T4 vs IPB80N06S2LH5ATMA1 |
| STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | STD12NF06T4 vs STP4NK60Z |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STD12NF06T4 vs FQA30N40 |
| FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | STD12NF06T4 vs FQA17N40 |
| SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | STD12NF06T4 vs SSS7N60B |
| FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD12NF06T4 vs FDP6035L |
| BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STD12NF06T4 vs BUK465-60A |
| IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | STD12NF06T4 vs IXFH68N20 |
| STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | STD12NF06T4 vs STD7NK30Z |
| SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | STD12NF06T4 vs SPA16N50C3 |