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Part Details for STB36NM60ND by STMicroelectronics
Overview of STB36NM60ND by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STB36NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AH0137
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Newark | Mosfet, N-Ch, 600V, 29A, 150Deg C, 190W, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.097Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Stmicroelectronics STB36NM60ND RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
86AK6452
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Newark | Mosfet, N-Ch, 600V, 29A, To-263 Rohs Compliant: Yes |Stmicroelectronics STB36NM60ND RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$3.7700 / $4.2400 | Buy Now |
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DISTI #
497-13861-1-ND
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DigiKey | MOSFET N-CH 600V 29A D2PAK Min Qty: 1 Lead time: 99 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
474 In Stock |
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$3.5070 / $7.1300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$3.4400 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$3.4400 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$3.4400 | Buy Now |
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DISTI #
79015322
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Verical | Trans MOSFET N-CH 600V 29A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 184 Package Multiple: 184 Date Code: 1932 | Americas - 184 |
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$5.9753 | Buy Now |
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ComSIT USA | 600 V, 29 A, 0.097 OHM TYP FDMESH II N-CHANNEL POWER MOSFET (WITH FAST DIODE) IN D2PAK PACKAGE Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1485 |
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RFQ |
Part Details for STB36NM60ND
STB36NM60ND CAD Models
STB36NM60ND Part Data Attributes
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STB36NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB36NM60ND
STMicroelectronics
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 29 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for STB36NM60ND
This table gives cross-reference parts and alternative options found for STB36NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB36NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW37N60DM2AG | STMicroelectronics | $5.2215 | Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package | STB36NM60ND vs STW37N60DM2AG |
| IPB60R099CS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | STB36NM60ND vs IPB60R099CS |
| IPI60R099CPXKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | STB36NM60ND vs IPI60R099CPXKSA1 |
| IPB60R125CPATMA1 | Infineon Technologies AG | $3.1110 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STB36NM60ND vs IPB60R125CPATMA1 |
| IPB60R125CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | STB36NM60ND vs IPB60R125CP |
| TK25V60X | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | STB36NM60ND vs TK25V60X |
| SIHP33N60E-GE3 | Vishay Intertechnologies | $3.6157 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | STB36NM60ND vs SIHP33N60E-GE3 |
| SIHG28N60EF-GE3 | Vishay Intertechnologies | $4.4825 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | STB36NM60ND vs SIHG28N60EF-GE3 |
| SIHB33N60ET1-GE3 | Vishay Intertechnologies | $3.4650 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | STB36NM60ND vs SIHB33N60ET1-GE3 |
| IPI65R110CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | STB36NM60ND vs IPI65R110CFD |