Datasheets
STB25NM60NT4 by: STMicroelectronics

20A, 600V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

Part Details for STB25NM60NT4 by STMicroelectronics

Results Overview of STB25NM60NT4 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

STB25NM60NT4 Information

STB25NM60NT4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for STB25NM60NT4

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STB25NM60NT4 Part Data Attributes

STB25NM60NT4 STMicroelectronics
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STB25NM60NT4 STMicroelectronics 20A, 600V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB25NM60NT4

This table gives cross-reference parts and alternative options found for STB25NM60NT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB25NM60NT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCB20N60 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT, D2PAK-3 STB25NM60NT4 vs FCB20N60
FCB20N60TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT, D2PAK-3 STB25NM60NT4 vs FCB20N60TM
FCB20N60FTM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 STB25NM60NT4 vs FCB20N60FTM
Part Number Manufacturer Composite Price Description Compare
APT20N60SC3 Microsemi Corporation Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 STB25NM60NT4 vs APT20N60SC3
FCB20N60FTM onsemi $3.8765 Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL STB25NM60NT4 vs FCB20N60FTM
FCB20N60 onsemi $4.1140 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 STB25NM60NT4 vs FCB20N60
FCB20N60TM onsemi Check for Price Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL STB25NM60NT4 vs FCB20N60TM
STB20NM65N STMicroelectronics Check for Price 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STB25NM60NT4 vs STB20NM65N
APT20N60SCF Microsemi Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 STB25NM60NT4 vs APT20N60SCF
STB25NM60N STMicroelectronics Check for Price 21A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STB25NM60NT4 vs STB25NM60N
STB26NM60NTRL STMicroelectronics Check for Price 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STB25NM60NT4 vs STB26NM60NTRL
APT20N60SC3G Microsemi Corporation Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 STB25NM60NT4 vs APT20N60SC3G
APT20N60SCFG Microsemi Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 STB25NM60NT4 vs APT20N60SCFG