-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
46P4278
|
Newark | Lv Mosfet Planar & Old |Stmicroelectronics STB150NF55T4 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
DISTI #
497-7934-1-ND
|
DigiKey | MOSFET N-CH 55V 120A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
999 In Stock |
|
$1.3205 / $3.9300 | Buy Now |
DISTI #
STB150NF55T4
|
Avnet Americas | Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB150NF55T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
|
$1.2576 / $1.3205 | Buy Now |
DISTI #
511-STB150NF55
|
Mouser Electronics | MOSFETs N-Ch 55 Volt 120 Amp RoHS: Compliant | 838 |
|
$1.2900 / $3.2400 | Buy Now |
DISTI #
V72:2272_06557573
|
Arrow Electronics | Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2317 Container: Cut Strips | Americas - 1950 |
|
$0.8474 / $1.0502 | Buy Now |
DISTI #
E02:0323_00213759
|
Arrow Electronics | Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Date Code: 2428 | Europe - 1000 |
|
$1.2816 / $1.3218 | Buy Now |
|
STMicroelectronics | N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET RoHS: Compliant Min Qty: 1 | 838 |
|
$1.3500 / $3.1800 | Buy Now |
|
Future Electronics | STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
|
$1.2600 / $1.3000 | Buy Now |
|
Future Electronics | STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
|
$1.2600 / $1.3000 | Buy Now |
DISTI #
67585493
|
Verical | Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 6 Package Multiple: 1 Date Code: 2317 | Americas - 1950 |
|
$0.8474 / $1.0502 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STB150NF55T4
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STB150NF55T4
STMicroelectronics
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 850 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STB150NF55T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB150NF55T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STB150NF55T4 vs NDB706AL |
IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB150NF55T4 vs IPB80N06S2LH5ATMA1 |
FQA11N90 | Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STB150NF55T4 vs FQA11N90 |
FQAF7N80 | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | STB150NF55T4 vs FQAF7N80 |
SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB150NF55T4 vs SPP80N03S2L-05 |
NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB150NF55T4 vs NDP7050L |
FQAF65N06 | Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | STB150NF55T4 vs FQAF65N06 |
FDP14N60 | Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB150NF55T4 vs FDP14N60 |
IXFH32N50 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXYS Corporation | STB150NF55T4 vs IXFH32N50 |
IXFX66N50Q2 | Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | STB150NF55T4 vs IXFX66N50Q2 |