Datasheets
STB150NF55T4 by: STMicroelectronics

N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET

Part Details for STB150NF55T4 by STMicroelectronics

Overview of STB150NF55T4 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STB150NF55T4

Part # Distributor Description Stock Price Buy
DISTI # 46P4278
Newark Lv Mosfet Planar & Old |Stmicroelectronics STB150NF55T4 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-7934-1-ND
DigiKey MOSFET N-CH 55V 120A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 999
In Stock
  • 1 $3.9300
  • 10 $2.5760
  • 100 $1.8087
  • 500 $1.4811
  • 1,000 $1.3759
  • 2,000 $1.3205
$1.3205 / $3.9300 Buy Now
DISTI # STB150NF55T4
Avnet Americas Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB150NF55T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.3205
  • 2,000 $1.2883
  • 4,000 $1.2728
  • 6,000 $1.2576
$1.2576 / $1.3205 Buy Now
DISTI # 511-STB150NF55
Mouser Electronics MOSFETs N-Ch 55 Volt 120 Amp RoHS: Compliant 838
  • 1 $3.2400
  • 10 $2.2600
  • 100 $1.6500
  • 500 $1.3800
  • 1,000 $1.3200
  • 5,000 $1.2900
$1.2900 / $3.2400 Buy Now
DISTI # V72:2272_06557573
Arrow Electronics Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2317 Container: Cut Strips Americas - 1950
  • 1 $1.0502
  • 10 $0.9859
  • 25 $0.9760
  • 100 $0.9138
  • 250 $0.9046
  • 500 $0.8738
  • 1,000 $0.8474
$0.8474 / $1.0502 Buy Now
DISTI # E02:0323_00213759
Arrow Electronics Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Date Code: 2428 Europe - 1000
  • 1,000 $1.3218
  • 2,000 $1.3097
  • 5,000 $1.2816
$1.2816 / $1.3218 Buy Now
STMicroelectronics N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET RoHS: Compliant Min Qty: 1 838
  • 1 $3.1800
  • 10 $2.2200
  • 25 $2.2200
  • 100 $1.6200
  • 250 $1.6200
  • 500 $1.3500
$1.3500 / $3.1800 Buy Now
Future Electronics STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $1.3000
  • 2,000 $1.2800
  • 3,000 $1.2600
$1.2600 / $1.3000 Buy Now
Future Electronics STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $1.3000
  • 2,000 $1.2800
  • 3,000 $1.2600
$1.2600 / $1.3000 Buy Now
DISTI # 67585493
Verical Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 6 Package Multiple: 1 Date Code: 2317 Americas - 1950
  • 6 $1.0502
  • 10 $0.9859
  • 25 $0.9760
  • 100 $0.9138
  • 250 $0.9046
  • 500 $0.8738
  • 1,000 $0.8474
$0.8474 / $1.0502 Buy Now
DISTI # 85244746
Verical Trans MOSFET N-CH 55V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2428 Americas - 1000
  • 1,000 $1.3484
  • 2,000 $1.3360
  • 5,000 $1.3074
$1.3074 / $1.3484 Buy Now
DISTI # STB150NF55T4
Avnet Silica Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: STB150NF55T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now

Part Details for STB150NF55T4

STB150NF55T4 CAD Models

STB150NF55T4 Part Data Attributes

STB150NF55T4 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB150NF55T4 STMicroelectronics N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description ROHS COMPLIANT, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 850 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB150NF55T4

This table gives cross-reference parts and alternative options found for STB150NF55T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB150NF55T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STB150NF55T4 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB150NF55T4 vs IPB80N06S2LH5ATMA1
FQA11N90 Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN Fairchild Semiconductor Corporation STB150NF55T4 vs FQA11N90
FQAF7N80 Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation STB150NF55T4 vs FQAF7N80
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB150NF55T4 vs SPP80N03S2L-05
NDP7050L Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STB150NF55T4 vs NDP7050L
FQAF65N06 Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation STB150NF55T4 vs FQAF65N06
FDP14N60 Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STB150NF55T4 vs FDP14N60
IXFH32N50 Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IXYS Corporation STB150NF55T4 vs IXFH32N50
IXFX66N50Q2 Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation STB150NF55T4 vs IXFX66N50Q2

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