Part Details for SSP4N80 by Samsung Semiconductor
Overview of SSP4N80 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Telecommunications
Automotive
Robotics and Drones
Price & Stock for SSP4N80
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4 A, 800 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 56 |
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$4.1160 / $8.8200 | Buy Now |
Part Details for SSP4N80
SSP4N80 CAD Models
SSP4N80 Part Data Attributes:
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SSP4N80
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
SSP4N80
Samsung Semiconductor
Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SSP4N80
This table gives cross-reference parts and alternative options found for SSP4N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSP4N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ80A | 3.8A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SSP4N80 vs BUZ80A |
| STP4NA80 | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SSP4N80 vs STP4NA80 |
| IRFBE30PBF | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | SSP4N80 vs IRFBE30PBF |
| BUK456-800A | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | SSP4N80 vs BUK456-800A |
| BUZ80A | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | SSP4N80 vs BUZ80A |
| IRFBE30 | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | SSP4N80 vs IRFBE30 |
| BUZ81 | Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | SSP4N80 vs BUZ81 |
| MTP4N80E | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SSP4N80 vs MTP4N80E |
| BUZ80A | 3A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SSP4N80 vs BUZ80A |
| BUZ81 | Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SSP4N80 vs BUZ81 |