Part Details for SSM3K16FU(TE85L,F) by Toshiba America Electronic Components
Overview of SSM3K16FU(TE85L,F) by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Consumer Electronics
Internet of Things (IoT)
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SSM3K16FU(TE85L,F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R2449
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Newark | Mosfet, N Channel, 0.1A, 20V, Sot23, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:100Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4V, Gate Source Threshold Voltage Max:1.1V Rohs Compliant: Yes |Toshiba SSM3K16FU(TE85L, F) Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 12485 |
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$0.1330 / $0.4590 | Buy Now |
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DISTI #
86AK6429
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Newark | Mosfet, N-Ch, 20V, 0.1A, Sc-70 Rohs Compliant: Yes |Toshiba SSM3K16FU(TE85L, F) Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0570 / $0.0990 | Buy Now |
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Quest Components | 1224 |
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$0.7035 / $2.0100 | Buy Now | |
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DISTI #
SSM3K16FU
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TME | Transistor: N-MOSFET, unipolar, 20V, 0.1A, 150mW, SC70 Min Qty: 5 | 0 |
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$0.0760 / $0.1500 | RFQ |
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DISTI #
SSM3K16FU(TE85L,F)
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EBV Elektronik | Trans MOSFET N-CH 20V 0.1A 3-Pin SOT-323 T/R (Alt: SSM3K16FU(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SSM3K16FU(TE85L,F)
SSM3K16FU(TE85L,F) CAD Models
SSM3K16FU(TE85L,F) Part Data Attributes
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SSM3K16FU(TE85L,F)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3K16FU(TE85L,F)
Toshiba America Electronic Components
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,100MA I(D),SC-70
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.1 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |