Part Details for SSF7NS65G by Suzhou Good-Ark Electronics Co Ltd
Overview of SSF7NS65G by Suzhou Good-Ark Electronics Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SSF7NS65G
SSF7NS65G CAD Models
SSF7NS65G Part Data Attributes
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SSF7NS65G
Suzhou Good-Ark Electronics Co Ltd
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Datasheet
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SSF7NS65G
Suzhou Good-Ark Electronics Co Ltd
Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GOOD-ARK ELECTRONICS CO LTD | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 68 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SSF7NS65G
This table gives cross-reference parts and alternative options found for SSF7NS65G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSF7NS65G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | SSF7NS65G vs IRFS11N50ATRL |
| SIHP7N60E-E3 | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SSF7NS65G vs SIHP7N60E-E3 |
| SPI07N60S5HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SSF7NS65G vs SPI07N60S5HKSA1 |
| IRFS11N50ATRRPBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | SSF7NS65G vs IRFS11N50ATRRPBF |
| IRFS11N50ATRRP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SSF7NS65G vs IRFS11N50ATRRP |
| IRFS11N50APBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Vishay Intertechnologies | SSF7NS65G vs IRFS11N50APBF |
| IRFS11N50ATRLP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SSF7NS65G vs IRFS11N50ATRLP |
| RM8N650T2 | Power Field-Effect Transistor, 8A I(D), 650V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3L-C, 3 PIN | Rectron Semiconductor | SSF7NS65G vs RM8N650T2 |
| SPI07N60C3HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SSF7NS65G vs SPI07N60C3HKSA1 |
| SPB07N60C3XT | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SSF7NS65G vs SPB07N60C3XT |