Part Details for SSF2112H2 by Suzhou Good-Ark Electronics Co Ltd
Overview of SSF2112H2 by Suzhou Good-Ark Electronics Co Ltd
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Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Consumer Electronics
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Part Details for SSF2112H2
SSF2112H2 CAD Models
SSF2112H2 Part Data Attributes
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SSF2112H2
Suzhou Good-Ark Electronics Co Ltd
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Datasheet
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SSF2112H2
Suzhou Good-Ark Electronics Co Ltd
Power Field-Effect Transistor, 20V, 0.0125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSSOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | GOOD-ARK ELECTRONICS CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain-source On Resistance-Max | 0.0125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |