Part Details for SS9018GBU by onsemi
Overview of SS9018GBU by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for SS9018GBU
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK2515
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Newark | Ss9018Gbu, Single Bipolar Transistors |Onsemi SS9018GBU Min Qty: 10690 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.0510 | Buy Now |
DISTI #
4183793
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Farnell | SS9018GBU, SINGLE BIPOLAR TRANSISTORS RoHS: Compliant Min Qty: 20000 Lead time: 3 Weeks, 1 Days Container: Each | 19952 |
|
$0.0312 | Buy Now |
|
Flip Electronics | Stock, ship today | 9570 |
|
$0.0210 | RFQ |
Part Details for SS9018GBU
SS9018GBU CAD Models
SS9018GBU Part Data Attributes:
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SS9018GBU
onsemi
Buy Now
Datasheet
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Compare Parts:
SS9018GBU
onsemi
NPN Epitaxial Silicon Transistor, 10000-BLKBG
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 135AN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 0.05 A | |
Collector-Base Capacitance-Max | 1.7 pF | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 72 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.4 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 1100 MHz |