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Power Field-Effect Transistor, 50A I(D), 40V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQD50P04-13L_GE3
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Avnet Americas | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD50P04-13L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$1.2294 / $1.3062 | Buy Now |
DISTI #
SQD50P04-13L-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD50P04-13L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
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RFQ | |
DISTI #
78-SQD50P04-13L_GE3
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Mouser Electronics | MOSFETs 40V 50A 83W AEC-Q101 Qualified RoHS: Compliant | 13662 |
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$1.2700 / $2.8000 | Buy Now |
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Future Electronics | SQD50P04-13L Series P-Channel 40 V 13 mOhms 83 W SMT Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Container: Reel | 2000Reel |
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$1.2800 | Buy Now |
DISTI #
SQD50P04-13L_GE3
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Avnet Asia | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK (Alt: SQD50P04-13L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days | 0 |
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RFQ | |
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CHIPMALL.COM LIMITED | 40V 50A 13m@17A,10V 2.5V@250uA 1 Piece P-Channel TO-252AA MOSFETs ROHS | 1853 |
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$0.6996 / $1.2243 | Buy Now |
DISTI #
SQD50P04-13L_GE3
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EBV Elektronik | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK (Alt: SQD50P04-13L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SQD50P04-13L_GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SQD50P04-13L_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 40V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SQD50P04-13L_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQD50P04-13L_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SQD50P04-09L-GE3 | TRANSISTOR 50 A, 40 V, 0.0094 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SQD50P04-13L_GE3 vs SQD50P04-09L-GE3 |
SQD19P06-60L_GE3 | Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2 | Vishay Intertechnologies | SQD50P04-13L_GE3 vs SQD19P06-60L_GE3 |
SQD50P06-15L_GE3 | Power Field-Effect Transistor, 50A I(D), 60V, 0.0155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SQD50P04-13L_GE3 vs SQD50P06-15L_GE3 |
SQD50P04-09L-GE3 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SQD50P04-13L_GE3 vs SQD50P04-09L-GE3 |
SQD50P04-13L-GE3 | TRANSISTOR 50 A, 40 V, 0.017 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SQD50P04-13L_GE3 vs SQD50P04-13L-GE3 |