Part Details for SQD50N04-5M6_GE3 by Vishay Intertechnologies
Overview of SQD50N04-5M6_GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SQD50N04-5M6_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26AK5822
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Newark | Mosfet, N-Ch, 40V, 50A, To-252Aa Rohs Compliant: Yes |Vishay SQD50N04-5M6_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 25 |
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$1.0100 / $1.6600 | Buy Now |
|
DISTI #
SQD50N04-5M6_GE3
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Avnet Americas | Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: SQD50N04-5M6_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.7217 / $0.9168 | Buy Now |
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DISTI #
78-SQD50N04-5M6_GE3
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Mouser Electronics | MOSFET N-Channel 40V AEC-Q101 Qualified RoHS: Compliant | 1949 |
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$0.6680 / $1.6000 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks | 0 |
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$0.7040 | Buy Now |
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Chip1Cloud | MOSFET N-CH 40V 50A TO-252 | 6249 |
|
RFQ |
Part Details for SQD50N04-5M6_GE3
SQD50N04-5M6_GE3 CAD Models
SQD50N04-5M6_GE3 Part Data Attributes:
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SQD50N04-5M6_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQD50N04-5M6_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 210 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 31 ns | |
| Turn-on Time-Max (ton) | 46 ns |