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Transistors / Power Field-Effect Transistors / SQD100N03-3M4_GE3
Datasheets
SQD100N03-3M4_GE3 by:

Power Field-Effect Transistor, 100A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

Part Details for SQD100N03-3M4_GE3 by Vishay Intertechnologies

Overview of SQD100N03-3M4_GE3 by Vishay Intertechnologies

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Price & Stock for SQD100N03-3M4_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQD100N03-3M4_GE3
Avnet Americas Trans MOSFET N-CH 30V 100A 3-Pin TO-252 T/R - Tape and Reel (Alt: SQD100N03-3M4_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.8915
  • 4,000 $0.8629
  • 8,000 $0.8343
  • 12,000 $0.8005
  • 16,000 $0.7745
  • 20,000 $0.7381
  • 200,000 $0.7017
$0.7017 / $0.8915 Buy Now
DISTI # 78-SQD100N03-3M4_GE3
Mouser Electronics MOSFET 30V 100A 136W N-Channel MOSFET RoHS: Compliant 1654
  • 1 $1.5500
  • 10 $1.2900
  • 100 $1.0300
  • 250 $0.9450
  • 500 $0.8580
  • 1,000 $0.7350
  • 2,000 $0.6980
  • 4,000 $0.6710
  • 10,000 $0.6490
$0.6490 / $1.5500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks 0
  • 2,000 $0.6840
$0.6840 Buy Now

Part Details for SQD100N03-3M4_GE3

SQD100N03-3M4_GE3 CAD Models

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SQD100N03-3M4_GE3 Part Data Attributes

Parametric Data
SQD100N03-3M4_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQD100N03-3M4_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 100A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 168 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SQD100N03-3M4_GE3

This table gives cross-reference parts and alternative options found for SQD100N03-3M4_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQD100N03-3M4_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB100N03S2L-03 Power Field-Effect Transistor, 100A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SQD100N03-3M4_GE3 vs SPB100N03S2L-03
SQD100N03-3M2L_GE3 Power Field-Effect Transistor, 100A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies SQD100N03-3M4_GE3 vs SQD100N03-3M2L_GE3

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