Datasheets
SPP80N03S2L05AKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for SPP80N03S2L05AKSA1 by Infineon Technologies AG

Overview of SPP80N03S2L05AKSA1 by Infineon Technologies AG

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Industrial Automation Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Security and Surveillance Aerospace and Defense Healthcare Renewable Energy Robotics and Drones

Part Details for SPP80N03S2L05AKSA1

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SPP80N03S2L05AKSA1 Part Data Attributes

SPP80N03S2L05AKSA1 Infineon Technologies AG
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SPP80N03S2L05AKSA1 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description PLASTIC, TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 325 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPP80N03S2L05AKSA1

This table gives cross-reference parts and alternative options found for SPP80N03S2L05AKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP80N03S2L05AKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SPI80N03S2L-05 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN SPP80N03S2L05AKSA1 vs SPI80N03S2L-05
UT75N03G-TA3-T Unisonic Technologies Co Ltd Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN SPP80N03S2L05AKSA1 vs UT75N03G-TA3-T
FDP6670ALJ69Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN SPP80N03S2L05AKSA1 vs FDP6670ALJ69Z
UT75N03G-TM3-T Unisonic Technologies Co Ltd Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 SPP80N03S2L05AKSA1 vs UT75N03G-TM3-T
SPP80N03S2L-04XK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN SPP80N03S2L05AKSA1 vs SPP80N03S2L-04XK
FDP7030LJ69Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN SPP80N03S2L05AKSA1 vs FDP7030LJ69Z

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