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Transistors Power Field-Effect Transistors SPD10N10

SPD10N10
Description: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of SPD10N10 by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for SPD10N10 by Siemens
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Part Data Attributes for SPD10N10 by Siemens
Parametric Data

SPD10N10
Siemens
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SIEMENS A G
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. SPD10N10
    Siemens
    Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

Alternate Parts for SPD10N10

This table gives cross-reference parts and alternative options found for SPD10N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD10N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RF1S45N06LESM9A 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC SPD10N10 vs RF1S45N06LESM9A
IRF3710-009PBF Power Field-Effect Transistor, 46A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier SPD10N10 vs IRF3710-009PBF
IRF3710-006PBF Power Field-Effect Transistor, 46A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier SPD10N10 vs IRF3710-006PBF
RFD12N06RLESM 12A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SPD10N10 vs RFD12N06RLESM
934055700118 18A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3 NXP Semiconductors SPD10N10 vs 934055700118
IRF4104 Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier SPD10N10 vs IRF4104
IRF3710-017PBF Power Field-Effect Transistor, 46A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier SPD10N10 vs IRF3710-017PBF
IRF3710-029PBF Power Field-Effect Transistor, 46A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier SPD10N10 vs IRF3710-029PBF
IRF1010Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier SPD10N10 vs IRF1010Z
IRF3710-030PBF Power Field-Effect Transistor, 46A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier SPD10N10 vs IRF3710-030PBF

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