Datasheets
SPD03N60C3ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3

Part Details for SPD03N60C3ATMA1 by Infineon Technologies AG

Overview of SPD03N60C3ATMA1 by Infineon Technologies AG

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Price & Stock for SPD03N60C3ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-SPD03N60C3ATMA1CT-ND
DigiKey MOSFET N-CH 600V 3.2A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 17260
In Stock
  • 1 $1.9400
  • 10 $1.2360
  • 100 $0.8345
  • 500 $0.6627
  • 1,000 $0.6074
  • 2,500 $0.5476
  • 5,000 $0.5238
$0.5238 / $1.9400 Buy Now
DISTI # SPD03N60C3ATMA1
Avnet Americas Trans MOSFET N-CH 600(Min)V 3.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD03N60C3ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3698
  • 5,000 $0.3652
  • 10,000 $0.3607
  • 15,000 $0.3564
  • 20,000 $0.3521
$0.3521 / $0.3698 Buy Now
DISTI # 726-SPD03N60C3ATMA1
Mouser Electronics MOSFETs LOW POWER_LEGACY RoHS: Compliant 2430
  • 1 $1.4100
  • 10 $1.0600
  • 100 $0.7430
  • 500 $0.6040
  • 1,000 $0.5590
  • 2,500 $0.5230
$0.5230 / $1.4100 Buy Now
DISTI # V79:2366_29214560
Arrow Electronics Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2232 Americas - 17500
  • 1 $0.9982
  • 10 $0.8277
  • 100 $0.6481
  • 500 $0.5536
  • 1,000 $0.5210
  • 2,500 $0.4830
  • 5,000 $0.4679
$0.4679 / $0.9982 Buy Now
DISTI # E02:0323_07557582
Arrow Electronics Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Date Code: 2436 Europe - 12500
  • 2,500 $0.4625
  • 5,000 $0.4571
$0.4571 / $0.4625 Buy Now
DISTI # V36:1790_06384092
Arrow Electronics Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Date Code: 2418 Americas - 12500
  • 2,500 $0.5192
  • 5,000 $0.5114
$0.5114 / $0.5192 Buy Now
Future Electronics N-Channel 600 V 3.2 A 38 W SMT Power Transistor MOSFET - PG-TO-252-3-1 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel 2500
Reel
  • 2,500 $0.4950
  • 5,000 $0.4850
  • 7,500 $0.4800
  • 10,000 $0.4750
  • 12,500 $0.4650
$0.4650 / $0.4950 Buy Now
Future Electronics N-Channel 600 V 3.2 A 38 W SMT Power Transistor MOSFET - PG-TO-252-3-1 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel 0
Reel
  • 2,500 $0.4950
  • 5,000 $0.4850
  • 7,500 $0.4800
  • 10,000 $0.4750
  • 12,500 $0.4650
$0.4650 / $0.4950 Buy Now
DISTI # 81412484
Verical Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 14 Package Multiple: 1 Date Code: 2232 Americas - 17500
  • 14 $0.8277
  • 100 $0.6481
  • 500 $0.5536
  • 1,000 $0.5210
  • 2,500 $0.4830
  • 5,000 $0.4679
$0.4679 / $0.8277 Buy Now
DISTI # 84955530
Verical Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2436 Americas - 12500
  • 2,500 $0.4715
  • 5,000 $0.4661
$0.4661 / $0.4715 Buy Now
DISTI # 82027011
Verical Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2418 Americas - 12500
  • 2,500 $0.5192
  • 5,000 $0.5114
$0.5114 / $0.5192 Buy Now
Rochester Electronics SPD03N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Active Min Qty: 1 54
  • 1 $0.5819
  • 25 $0.5703
  • 100 $0.5470
  • 500 $0.5237
  • 1,000 $0.4946
$0.4946 / $0.5819 Buy Now
DISTI # SP001117760
EBV Elektronik Trans MOSFET N-CH 600(Min)V 3.2A 3-Pin TO-252 T/R (Alt: SP001117760) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SPD03N60C3ATMA1

SPD03N60C3ATMA1 CAD Models

SPD03N60C3ATMA1 Part Data Attributes

SPD03N60C3ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPD03N60C3ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-252, DPAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9.6 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPD03N60C3ATMA1

This table gives cross-reference parts and alternative options found for SPD03N60C3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD03N60C3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPD03N60C3BTMA1 Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 Infineon Technologies AG SPD03N60C3ATMA1 vs SPD03N60C3BTMA1

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