Part Details for SPD02N60S5BTMA1 by Infineon Technologies AG
Overview of SPD02N60S5BTMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPD02N60S5BTMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPD02N60S5BTMA1
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Avnet Americas | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD02N60S5BTMA1) RoHS: Compliant Min Qty: 834 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 13370 Partner Stock |
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$0.3542 / $0.4375 | Buy Now |
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Rochester Electronics | SPD03N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 13370 |
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$0.3719 / $0.4375 | Buy Now |
Part Details for SPD02N60S5BTMA1
SPD02N60S5BTMA1 CAD Models
SPD02N60S5BTMA1 Part Data Attributes
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SPD02N60S5BTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD02N60S5BTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AA | |
Package Description | GREEN, PLASTIC, TO-252, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1.8 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 3.2 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SPD02N60S5BTMA1
This table gives cross-reference parts and alternative options found for SPD02N60S5BTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD02N60S5BTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPD02N60S5 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | SPD02N60S5BTMA1 vs SPD02N60S5 |