Datasheets
SPB08P06PG by: Infineon Technologies AG

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

Part Details for SPB08P06PG by Infineon Technologies AG

Overview of SPB08P06PG by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SPB08P06PG

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SPB08P06PG Part Data Attributes

SPB08P06PG Infineon Technologies AG
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SPB08P06PG Infineon Technologies AG Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.8 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 35.2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPB08P06PG

This table gives cross-reference parts and alternative options found for SPB08P06PG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB08P06PG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB08P06PGAT Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SPB08P06PG vs SPB08P06PGAT
SPP08P06PHXK Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPB08P06PG vs SPP08P06PHXK
SPD08P06PGBTMA1 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN Infineon Technologies AG SPB08P06PG vs SPD08P06PGBTMA1
SPB08P06PGATMA1 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SPB08P06PG vs SPB08P06PGATMA1
SPP08P06PHXKSA1 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPB08P06PG vs SPP08P06PHXKSA1
SFI2955TU Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation SPB08P06PG vs SFI2955TU

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