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Overview of SP1N5611 by Microsemi Corporation
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
CAD Models for SP1N5611 by Microsemi Corporation
Part Data Attributes for SP1N5611 by Microsemi Corporation
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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MICROSEMI CORP
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.10.00.50
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Additional Feature
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HIGH RELIABILITY
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Breakdown Voltage-Min
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43.7 V
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Case Connection
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ISOLATED
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Clamping Voltage-Max
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63.5 V
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Configuration
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SINGLE
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Diode Element Material
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SILICON
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Diode Type
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TRANS VOLTAGE SUPPRESSOR DIODE
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JESD-30 Code
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O-LALF-W2
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Non-rep Peak Rev Power Dis-Max
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1500 W
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Number of Elements
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1
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Number of Terminals
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2
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Operating Temperature-Max
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175 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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GLASS
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Package Shape
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ROUND
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Package Style
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LONG FORM
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Polarity
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UNIDIRECTIONAL
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Power Dissipation-Max
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3 W
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Reference Standard
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IEC-61000-4-2,4-4,4-5; MIL-19500
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Rep Pk Reverse Voltage-Max
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40.3 V
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Surface Mount
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NO
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Technology
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AVALANCHE
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Terminal Form
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WIRE
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Terminal Position
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AXIAL
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