Datasheets
SMN0470F by:

4A, 700V, 2.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN

Part Details for SMN0470F by Kodenshi Sensing

Overview of SMN0470F by Kodenshi Sensing

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for SMN0470F

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SMN0470F Part Data Attributes

SMN0470F Kodenshi Sensing
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SMN0470F Kodenshi Sensing 4A, 700V, 2.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer KODENSHI AUK CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 344 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 700 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 2.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SMN0470F

This table gives cross-reference parts and alternative options found for SMN0470F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMN0470F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
4N65L-TQ2-R Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Unisonic Technologies Co Ltd SMN0470F vs 4N65L-TQ2-R
4N65L-TA3-T Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Unisonic Technologies Co Ltd SMN0470F vs 4N65L-TA3-T
4N65L-TM3-T Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd SMN0470F vs 4N65L-TM3-T
AP04N60R-A-HF TRANSISTOR POWER, FET, FET General Purpose Power Advanced Power Electronics Corp SMN0470F vs AP04N60R-A-HF
4N65G-TA3-T Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Unisonic Technologies Co Ltd SMN0470F vs 4N65G-TA3-T
SMN0470F Power Field-Effect Transistor, 4A I(D), 700V, 2.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Kodenshi Corporation SMN0470F vs SMN0470F
4N65L-T2Q-T Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Unisonic Technologies Co Ltd SMN0470F vs 4N65L-T2Q-T

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