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Overview of SMBJ60CATR by Sangdest Microelectronics (Nanjing) Co Ltd
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- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for SMBJ60CATR by Sangdest Microelectronics (Nanjing) Co Ltd
Part Data Attributes for SMBJ60CATR by Sangdest Microelectronics (Nanjing) Co Ltd
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|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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HTS Code
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8541.10.00.50
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Date Of Intro
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2018-08-03
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Additional Feature
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EXCELLENT CLAMPING CAPABILITY
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Breakdown Voltage-Max
|
73.7 V
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Breakdown Voltage-Min
|
66.7 V
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Breakdown Voltage-Nom
|
70.2 V
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Clamping Voltage-Max
|
96.8 V
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Configuration
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SINGLE
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Diode Element Material
|
SILICON
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Diode Type
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TRANS VOLTAGE SUPPRESSOR DIODE
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JEDEC-95 Code
|
DO-214AA
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JESD-30 Code
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R-PDSO-C2
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Non-rep Peak Rev Power Dis-Max
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600 W
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity
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BIDIRECTIONAL
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Reference Standard
|
MIL-STD-750
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Rep Pk Reverse Voltage-Max
|
60 V
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Reverse Current-Max
|
5 µA
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Reverse Test Voltage
|
60 V
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Surface Mount
|
YES
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Technology
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AVALANCHE
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Terminal Form
|
C BEND
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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