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Overview of SMBJ43ATR by Sangdest Microelectronics (Nanjing) Co Ltd
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- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for SMBJ43ATR by Sangdest Microelectronics (Nanjing) Co Ltd
Part Data Attributes for SMBJ43ATR by Sangdest Microelectronics (Nanjing) Co Ltd
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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SANGDEST MICROELECTRONICS (NANJING) CO LTD
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.10.00.50
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Date Of Intro
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2018-08-03
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Additional Feature
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EXCELLENT CLAMPING CAPABILITY
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Breakdown Voltage-Max
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52.8 V
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Breakdown Voltage-Min
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47.8 V
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Breakdown Voltage-Nom
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50.3 V
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Clamping Voltage-Max
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69.4 V
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Configuration
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SINGLE
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Diode Element Material
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SILICON
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Diode Type
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TRANS VOLTAGE SUPPRESSOR DIODE
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JEDEC-95 Code
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DO-214AA
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JESD-30 Code
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R-PDSO-C2
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Non-rep Peak Rev Power Dis-Max
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600 W
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Number of Elements
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1
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Number of Terminals
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2
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity
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UNIDIRECTIONAL
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Reference Standard
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MIL-STD-750
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Rep Pk Reverse Voltage-Max
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43 V
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Reverse Current-Max
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5 µA
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Reverse Test Voltage
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43 V
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Surface Mount
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YES
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Technology
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AVALANCHE
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Terminal Form
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C BEND
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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