Part Details for SMBJ10CR4G by Taiwan Semiconductor
Overview of SMBJ10CR4G by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SMBJ10CR4G
SMBJ10CR4G CAD Models
SMBJ10CR4G Part Data Attributes
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SMBJ10CR4G
Taiwan Semiconductor
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Datasheet
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SMBJ10CR4G
Taiwan Semiconductor
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Package Description | R-PDSO-C2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Additional Feature | EXCELLENT CLAMPING CAPABILITY | |
Breakdown Voltage-Max | 13.6 V | |
Breakdown Voltage-Min | 11.1 V | |
Breakdown Voltage-Nom | 12.35 V | |
Clamping Voltage-Max | 18.8 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-214AA | |
JESD-30 Code | R-PDSO-C2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 600 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity | BIDIRECTIONAL | |
Power Dissipation-Max | 3 W | |
Rep Pk Reverse Voltage-Max | 10 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for SMBJ10CR4G
This table gives cross-reference parts and alternative options found for SMBJ10CR4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMBJ10CR4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SMBJ10CA | Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional, | Vishay Intertechnologies | SMBJ10CR4G vs SMBJ10CA |
SMBJ10CA-T3 | Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN | Sangdest Microelectronics (Nanjing) Co Ltd | SMBJ10CR4G vs SMBJ10CA-T3 |
SMBJ10CA | TRANSIL | STMicroelectronics | SMBJ10CR4G vs SMBJ10CA |
SMBJ10C | Transient Suppressor | Bytesonic Corporation | SMBJ10CR4G vs SMBJ10C |
SMBJ10CA | Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional | PRO-AN Electronic Co Ltd | SMBJ10CR4G vs SMBJ10CA |
SMBJ10CA | Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, | General Instrument Corp | SMBJ10CR4G vs SMBJ10CA |
SMBJ10CA-E3/5B | DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Transient Suppressor | Vishay Semiconductors | SMBJ10CR4G vs SMBJ10CA-E3/5B |
SMBJ10C | Surface Mount TVS Diode; Direction: Bidirectional; V(BR) Typ (V): 11.1V; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 10V; VBR Min (V): 11.1V; VBR Max (V): 13.6V; IR Max (uA): 5uA; VC Max (V): 18.8V; Package: SMB | Galaxy Microelectronics | SMBJ10CR4G vs SMBJ10C |
SMBJ10C | Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional | Kuwait Semiconductor Co Ltd | SMBJ10CR4G vs SMBJ10C |
SMBJ10C-52-E3 | Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN | Vishay Semiconductors | SMBJ10CR4G vs SMBJ10C-52-E3 |