Part Details for SIRA88BDP-T1-GE3 by Vishay Intertechnologies
Overview of SIRA88BDP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIRA88BDP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH5932
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Newark | Mosfet, N-Ch, 30V, 40A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SIRA88BDP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.0560 | Buy Now |
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DISTI #
SIRA88BDP-T1-GE3
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Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET (Alt: SIRA88BDP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days | 0 |
|
$0.1442 | Buy Now |
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DISTI #
38AH5932
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Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 38AH5932) RoHS: Not Compliant Min Qty: 5 Package Multiple: 5 Container: Ammo Pack | 0 |
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$0.3090 / $0.5200 | Buy Now |
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DISTI #
78-SIRA88BDP-T1-GE3
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Mouser Electronics | MOSFETs POWRPK N CHAN 30V RoHS: Compliant | 5948 |
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$0.1460 / $0.5200 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.83 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.1410 / $0.1530 | Buy Now |
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DISTI #
SIRA88BDP-T1-GE3
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TTI | MOSFETs POWRPK N CHAN 30V RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.1470 / $0.1560 | Buy Now |
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DISTI #
SIRA88BDP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 32A, Idm: 90A, 11W Min Qty: 1 | 0 |
|
$0.2110 / $0.4950 | RFQ |
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DISTI #
SIRA88BDP-T1-GE3
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EBV Elektronik | N-CHANNEL 30-V (D-S) MOSFET (Alt: SIRA88BDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIRA88BDP-T1-GE3
SIRA88BDP-T1-GE3 CAD Models
SIRA88BDP-T1-GE3 Part Data Attributes
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SIRA88BDP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA88BDP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2019-05-16 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.00683 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 54 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 17 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 40 ns | |
| Turn-on Time-Max (ton) | 25 ns |
Alternate Parts for SIRA88BDP-T1-GE3
This table gives cross-reference parts and alternative options found for SIRA88BDP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIRA88BDP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIRA18BDP-T1-GE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | SIRA88BDP-T1-GE3 vs SIRA18BDP-T1-GE3 |