Part Details for SIR167DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR167DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIR167DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
81AC2790
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Newark | Mosfet, P-Ch, -30V, -60A, 150Deg C, Transistor Polarity:P Channel, Continuous Drain Current Id:-60A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power Rohs Compliant: Yes |Vishay SIR167DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4727 |
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$0.7230 / $1.0800 | Buy Now |
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DISTI #
81AC3482
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Newark | P-Channel 30-V (D-S) Mosfet |Vishay SIR167DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4040 / $0.4140 | Buy Now |
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DISTI #
SIR167DP-T1-GE3
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Avnet Americas | P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR167DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.3729 | Buy Now |
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DISTI #
78-SIR167DP-T1-GE3
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Mouser Electronics | MOSFETs -30V Vds 25V Vgs PowerPAK SO-8 RoHS: Compliant | 10996 |
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$0.3800 / $1.0100 | Buy Now |
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Future Electronics | Single P-Channel 30 V 5.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.3650 / $0.3850 | Buy Now |
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DISTI #
SIR167DP-T1-GE3
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TTI | MOSFETs -30V Vds 25V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
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$0.3760 / $0.4140 | Buy Now |
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DISTI #
SIR167DP-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -60A, Idm: -120A Min Qty: 3000 | 0 |
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$0.5810 | RFQ |
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Chip 1 Exchange | INSTOCK | 66300 |
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RFQ | |
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DISTI #
SIR167DP-T1-GE3
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Avnet Asia | P-CHANNEL 30-V (D-S) MOSFET (Alt: SIR167DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
SIR167DP-T1-GE3
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EBV Elektronik | Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK SO (Alt: SIR167DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | EBV - 3000 |
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Buy Now |
Part Details for SIR167DP-T1-GE3
SIR167DP-T1-GE3 CAD Models
SIR167DP-T1-GE3 Part Data Attributes
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|
SIR167DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR167DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 460 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 65.8 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 106 ns | |
| Turn-on Time-Max (ton) | 90 ns |