Part Details for SIR164DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR164DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIR164DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R4876
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Newark | Mosfet Transistor, N Channel, 50 A, 30 V, 2.05 Mohm, 10 V, 1.2 V |Vishay SIR164DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5590 / $0.6600 | Buy Now |
DISTI #
SIR164DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR164DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.5155 | Buy Now |
DISTI #
781-SIR164DP-GE3
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Mouser Electronics | MOSFETs 30V 50A 69W 2.5mohm @ 10V RoHS: Compliant | 4651 |
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$0.5250 / $1.4000 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5050 / $0.5250 | Buy Now |
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Future Electronics | Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.5050 / $0.5250 | Buy Now |
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Bristol Electronics | 6765 |
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RFQ | ||
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Bristol Electronics | 78 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 33.3A I(D), 30V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5412 |
|
$0.5907 / $1.9690 | Buy Now |
DISTI #
SIR164DP-T1-GE3
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TTI | MOSFETs 30V 50A 69W 2.5mohm @ 10V pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.5250 / $0.5360 | Buy Now |
DISTI #
SIR164DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 50A, Idm: 70A, 69W Min Qty: 3000 | 0 |
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$0.9100 | RFQ |
Part Details for SIR164DP-T1-GE3
SIR164DP-T1-GE3 CAD Models
SIR164DP-T1-GE3 Part Data Attributes
|
SIR164DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR164DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 33.3 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |