Part Details for SIHP22N60AE-BE3 by Vishay Intertechnologies
Overview of SIHP22N60AE-BE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP22N60AE-BE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SIHP22N60AE-BE3
|
Avnet Americas | N-CHANNEL 600V - Rail/Tube (Alt: SIHP22N60AE-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
|
$1.5871 / $1.6863 | Buy Now |
|
DISTI #
78-SIHP22N60AE-BE3
|
Mouser Electronics | MOSFETs TO220 600V 20A N-CH MOSFET RoHS: Compliant | 3631 |
|
$1.6800 / $3.0200 | Buy Now |
|
|
Future Electronics | 650V,20A,.156OHM,TO-220, N-CH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks Container: Reel | 0Reel |
|
$1.6300 / $1.6700 | Buy Now |
|
DISTI #
SIHP22N60AE-BE3
|
TTI | MOSFETs TO220 600V 20A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2950 In Stock |
|
$1.5800 / $1.7300 | Buy Now |
Part Details for SIHP22N60AE-BE3
SIHP22N60AE-BE3 CAD Models
SIHP22N60AE-BE3 Part Data Attributes
|
|
SIHP22N60AE-BE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHP22N60AE-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 204 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 179 W | |
| Pulsed Drain Current-Max (IDM) | 49 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 132 ns | |
| Turn-on Time-Max (ton) | 104 ns |