Datasheets
SIHP180N60E-GE3 by:

Power Field-Effect Transistor,

Part Details for SIHP180N60E-GE3 by Vishay Intertechnologies

Overview of SIHP180N60E-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIHP180N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 07AH4768
Newark Mosfet, N-Ch, 19A, 600V, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:19A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.155Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Vishay SIHP180N60E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $3.4200
  • 10 $2.9200
  • 25 $2.7700
  • 50 $2.6000
  • 100 $2.4200
  • 500 $2.1800
$2.1800 / $3.4200 Buy Now
DISTI # SIHP180N60E-GE3
Avnet Americas N-CHANNEL 600V - Tape and Reel (Alt: SIHP180N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.4612
  • 2,000 $1.4379
  • 4,000 $1.4152
  • 6,000 $1.3917
  • 8,000 $1.3753
$1.3753 / $1.4612 Buy Now
DISTI # 78-SIHP180N60E-GE3
Mouser Electronics MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant 931
  • 1 $3.1300
  • 10 $2.6300
  • 25 $2.4800
  • 100 $2.1300
  • 250 $2.0100
  • 500 $1.8900
  • 1,000 $1.4600
$1.4600 / $3.1300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks 0
  • 1,000 $1.5400
$1.5400 Buy Now
DISTI # SIHP180N60E-GE3
TTI MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel Americas - 1000
In Stock
  • 1,000 $1.9500
$1.9500 Buy Now
DISTI # SIHP180N60E-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 12A, Idm: 44A, 156W, TO220AB Min Qty: 1 0
  • 1 $2.9500
  • 10 $2.5000
  • 50 $2.2000
  • 100 $2.0700
  • 250 $2.0400
$2.0400 / $2.9500 RFQ
DISTI # SMC-SIHP180N60E-GE3
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 119
RFQ
DISTI # SIHP180N60E-GE3
Avnet Asia N-CHANNEL 600V (Alt: SIHP180N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days 0
RFQ
DISTI # SIHP180N60E-GE3
EBV Elektronik N-CHANNEL 600V (Alt: SIHP180N60E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHP180N60E-GE3

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SIHP180N60E-GE3 Part Data Attributes

SIHP180N60E-GE3 Vishay Intertechnologies
Buy Now Datasheet
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SIHP180N60E-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 19 Weeks
Date Of Intro 2018-08-20
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 111 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 126 ns

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