Part Details for SIHP052N60EF-GE3 by Vishay Intertechnologies
Overview of SIHP052N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP052N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
77AH0224
|
Newark | Mosfet, N-Ch, 600V, 48A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:48A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay SIHP052N60EF-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1040 |
|
$2.9600 | Buy Now |
|
DISTI #
77AH0224
|
Avnet Americas | N-CHANNEL 600V - Bulk (Alt: 77AH0224) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 50 Partner Stock |
|
$5.2600 / $7.4000 | Buy Now |
|
DISTI #
SIHP052N60EF-GE3
|
Avnet Americas | N-CHANNEL 600V (Alt: SIHP052N60EF-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days | 0 |
|
$2.9400 / $3.1237 | Buy Now |
|
DISTI #
78-SIHP052N60EF-GE3
|
Mouser Electronics | MOSFETs EF Series Pwr MOSFET w/Fast Body Diode RoHS: Compliant | 912 |
|
$3.4300 / $7.5300 | Buy Now |
|
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Lead time: 19 Weeks Container: Bag | 0Bag |
|
$3.1700 / $3.6800 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Container: Bulk | 0Bulk |
|
$3.1700 / $3.6800 | Buy Now |
|
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1000 Lead time: 19 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$3.1700 / $3.8100 | Buy Now |
|
DISTI #
84769525
|
Verical | Power MOSFET Min Qty: 17 Package Multiple: 1 | Americas - 50 |
|
$4.2912 / $4.6614 | Buy Now |
|
DISTI #
SIHP052N60EF-GE3
|
TTI | MOSFETs EF Series Pwr MOSFET w/Fast Body Diode RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 1000 In Stock |
|
$3.1200 | Buy Now |
|
DISTI #
SIHP052N60EF-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 31A, Idm: 148A, 278W, TO220AB Min Qty: 1 | 0 |
|
$5.1300 / $7.7000 | RFQ |
Part Details for SIHP052N60EF-GE3
SIHP052N60EF-GE3 CAD Models
SIHP052N60EF-GE3 Part Data Attributes
|
|
SIHP052N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHP052N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Date Of Intro | 2019-12-08 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 353 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 278 W | |
| Pulsed Drain Current-Max (IDM) | 148 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 236 ns | |
| Turn-on Time-Max (ton) | 222 ns |