Datasheets
SIHLL110TR-GE3 by:

Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,

Part Details for SIHLL110TR-GE3 by Vishay Intertechnologies

Overview of SIHLL110TR-GE3 by Vishay Intertechnologies

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Price & Stock for SIHLL110TR-GE3

Part # Distributor Description Stock Price Buy
DISTI # 59AC7406
Newark N-Channel100V |Vishay SIHLL110TR-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.1920
$0.1920 Buy Now
DISTI # SIHLL110TR-GE3
Avnet Americas N-CHANNEL100V - Tape and Reel (Alt: SIHLL110TR-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.1719
$0.1719 Buy Now
DISTI # 78-SIHLL110TR-GE3
Mouser Electronics MOSFETs 100V Vds 20V Vgs SOT-223 RoHS: Compliant 8948
  • 1 $0.6100
  • 10 $0.5290
  • 100 $0.3950
  • 500 $0.3110
  • 1,000 $0.2400
  • 2,500 $0.2190
  • 10,000 $0.1900
  • 25,000 $0.1800
$0.1800 / $0.6100 Buy Now
Future Electronics N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks 0
  • 2,500 $0.1843
$0.1843 Buy Now
DISTI # SIHLL110TR-GE3
TTI MOSFETs 100V Vds 20V Vgs SOT-223 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.1860
  • 5,000 $0.1820
  • 10,000 $0.1790
  • 12,500 $0.1750
$0.1750 / $0.1860 Buy Now
DISTI # SIHLL110TR-GE3
TME Transistor: N-MOSFET, unipolar, 100V, 0.93A, 3.1W, SOT223 Min Qty: 1 0
  • 1 $0.7430
  • 5 $0.3640
  • 25 $0.3280
  • 100 $0.3050
  • 500 $0.2930
$0.2930 / $0.7430 RFQ
Chip 1 Exchange INSTOCK 403000
RFQ
DISTI # C1S803605000219
Chip1Stop Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant pbFree: Yes 17500
  • 1 $3.2000
  • 100 $0.6330
  • 500 $0.4150
  • 1,000 $0.3620
$0.3620 / $3.2000 Buy Now
CHIPMALL.COM LIMITED 100V 1.5A 540m@900mA,5V 2V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS 2308
  • 5 $0.3905
  • 50 $0.3272
  • 150 $0.3061
  • 500 $0.2624
  • 2,500 $0.2549
$0.2549 / $0.3905 Buy Now
DISTI # SIHLL110TR-GE3
EBV Elektronik (Alt: SIHLL110TR-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 1.5A 540m900mA5V 2V250uA 1 N-Channel SOT-223-3 MOSFETs ROHS 2308
  • 1 $0.3580
  • 10 $0.3193
  • 30 $0.2999
  • 100 $0.2807
  • 500 $0.2405
  • 1,000 $0.2337
$0.2337 / $0.3580 Buy Now
Wuhan P&S 100V,76m��,1.5A,N-Channe Power MOSFET Min Qty: 1 292500
  • 1 $0.9100
  • 100 $0.3300
  • 500 $0.2400
  • 1,000 $0.2200
$0.2200 / $0.9100 Buy Now

Part Details for SIHLL110TR-GE3

SIHLL110TR-GE3 CAD Models

SIHLL110TR-GE3 Part Data Attributes

SIHLL110TR-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHLL110TR-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.76 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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