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Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59AC7406
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Newark | N-Channel100V |Vishay SIHLL110TR-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1920 | Buy Now |
DISTI #
SIHLL110TR-GE3
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Avnet Americas | N-CHANNEL100V - Tape and Reel (Alt: SIHLL110TR-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.1719 | Buy Now |
DISTI #
78-SIHLL110TR-GE3
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Mouser Electronics | MOSFETs 100V Vds 20V Vgs SOT-223 RoHS: Compliant | 8948 |
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$0.1800 / $0.6100 | Buy Now |
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Future Electronics | N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks | 0 |
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$0.1843 | Buy Now |
DISTI #
SIHLL110TR-GE3
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TTI | MOSFETs 100V Vds 20V Vgs SOT-223 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$0.1750 / $0.1860 | Buy Now |
DISTI #
SIHLL110TR-GE3
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TME | Transistor: N-MOSFET, unipolar, 100V, 0.93A, 3.1W, SOT223 Min Qty: 1 | 0 |
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$0.2930 / $0.7430 | RFQ |
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Chip 1 Exchange | INSTOCK | 403000 |
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RFQ | |
DISTI #
C1S803605000219
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Chip1Stop | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant pbFree: Yes | 17500 |
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$0.3620 / $3.2000 | Buy Now |
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CHIPMALL.COM LIMITED | 100V 1.5A 540m@900mA,5V 2V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS | 2308 |
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$0.2549 / $0.3905 | Buy Now |
DISTI #
SIHLL110TR-GE3
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EBV Elektronik | (Alt: SIHLL110TR-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SIHLL110TR-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SIHLL110TR-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 0.76 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 15 pF | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |