Part Details for SIHL540STRL-GE3 by Vishay Intertechnologies
Overview of SIHL540STRL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHL540STRL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 785 |
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RFQ | ||
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Quest Components | 628 |
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$1.3464 / $3.2640 | Buy Now |
Part Details for SIHL540STRL-GE3
SIHL540STRL-GE3 CAD Models
SIHL540STRL-GE3 Part Data Attributes
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SIHL540STRL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHL540STRL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 440 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHL540STRL-GE3
This table gives cross-reference parts and alternative options found for SIHL540STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHL540STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | Vishay Intertechnologies | SIHL540STRL-GE3 vs IRL540STRLPBF |
| IRL540STRL | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL540STRL-GE3 vs IRL540STRL |
| IRL540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | SIHL540STRL-GE3 vs IRL540STRLPBF |
| SIHL540STRL-GE3 | TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHL540STRL-GE3 vs SIHL540STRL-GE3 |
| IRL540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | SIHL540STRL-GE3 vs IRL540SPBF |
| IRL540S | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL540STRL-GE3 vs IRL540S |