Part Details for SIHG24N65E-GE3 by Vishay Siliconix
Overview of SIHG24N65E-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHG24N65E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
742-SIHG24N65E-GE3-ND
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DigiKey | MOSFET N-CH 650V 24A TO247AC Min Qty: 1 Lead time: 20 Weeks Container: Tube |
860 In Stock |
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$2.7500 / $6.7800 | Buy Now |
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Bristol Electronics | 484 |
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RFQ | ||
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Quest Components | 387 |
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$3.7836 / $6.8793 | Buy Now |
Part Details for SIHG24N65E-GE3
SIHG24N65E-GE3 CAD Models
SIHG24N65E-GE3 Part Data Attributes
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SIHG24N65E-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHG24N65E-GE3
Vishay Siliconix
Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247AC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 508 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG24N65E-GE3
This table gives cross-reference parts and alternative options found for SIHG24N65E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG24N65E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG24N65E-GE3 | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | SIHG24N65E-GE3 vs SIHG24N65E-GE3 |