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Transistors / Power Field-Effect Transistors / SIHG20N50C-E3
Datasheets
SIHG20N50C-E3 by:

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Part Details for SIHG20N50C-E3 by Vishay Intertechnologies

Overview of SIHG20N50C-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHG20N50C-E3

Part # Distributor Description Stock Price Buy
DISTI # 55R1902
Newark Mosfet, N Channel, 500V, 20A, To-247Ac-3, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:500V, On Resistance Rds(On):225Mohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Msl:- Rohs Compliant: Yes |Vishay SIHG20N50C-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 4
  • 1 $3.2000
  • 10 $2.7300
  • 25 $2.6000
  • 50 $2.4400
  • 100 $2.2700
  • 500 $2.0500
$2.0500 / $3.2000 Buy Now
DISTI # 67613729
Verical Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC Min Qty: 12 Package Multiple: 1 Date Code: 2229 Americas - 38
  • 12 $2.7000
$2.7000 Buy Now
Bristol Electronics   1500
RFQ
DISTI # SIHG20N50C-E3
TTI MOSFETs 500V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 25 Package Multiple: 25 Container: Tube Americas - 1450
In Stock
  • 25 $2.1100
  • 50 $2.0700
  • 100 $1.7800
  • 250 $1.7300
  • 500 $1.6100
  • 1,000 $1.3700
  • 2,000 $1.3400
$1.3400 / $2.1100 Buy Now
DISTI # SIHG20N50C-E3
TME Transistor: N-MOSFET, unipolar, 500V, 11A, 250W, TO247AC Min Qty: 1 482
  • 1 $2.5700
  • 10 $1.9900
  • 25 $1.8600
  • 50 $1.7900
  • 100 $1.7800
$1.7800 / $2.5700 Buy Now
Chip 1 Exchange INSTOCK 62400
RFQ
DISTI # SIHG20N50C-E3
Avnet Asia N-CHANNEL 500V (Alt: SIHG20N50C-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 0
RFQ
DISTI # C1S803603830485
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 38
  • 1 $2.3200
  • 10 $2.1600
$2.1600 / $2.3200 Buy Now
CHIPMALL.COM LIMITED 500V 20A 270m@10V,10A 250W 5V@250uA 1 N-Channel TO-247AC-3 MOSFETs ROHS 1000
  • 5 $1.5393
  • 50 $1.1571
  • 150 $1.0166
  • 500 $0.9532
  • 2,500 $0.9260
$0.9260 / $1.5393 Buy Now
LCSC 500V 20A 270m10V10A 250W 5V250uA 1 N-Channel TO-247AC-3 MOSFETs ROHS 443
  • 1 $1.5748
  • 10 $1.3516
  • 25 $1.1855
  • 100 $1.0414
  • 500 $0.9766
  • 1,000 $0.9481
$0.9481 / $1.5748 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 1699
  • 100 $1.2000
  • 250 $1.0800
  • 500 $0.9600
$0.9600 / $1.2000 Buy Now
Wuhan P&S 500V,20A,N-Channel Power MOSFET Min Qty: 1 98000
  • 1 $2.7000
  • 100 $1.0800
  • 500 $1.0500
  • 1,000 $0.9700
$0.9700 / $2.7000 Buy Now

Part Details for SIHG20N50C-E3

SIHG20N50C-E3 CAD Models

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SIHG20N50C-E3 Part Data Attributes

Parametric Data
SIHG20N50C-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG20N50C-E3 Vishay Intertechnologies Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 361 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 292 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHG20N50C-E3

This table gives cross-reference parts and alternative options found for SIHG20N50C-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG20N50C-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SMN18T50FD 18A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Kodenshi Sensing SIHG20N50C-E3 vs SMN18T50FD
NTE2970 Power Field-Effect Transistor, 22A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, NTE Electronics Inc SIHG20N50C-E3 vs NTE2970
STB20NM50FD-1 20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, TABLESS TO-220, I2PAK-3 STMicroelectronics SIHG20N50C-E3 vs STB20NM50FD-1
SSF20N50UH Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Suzhou Good-Ark Electronics Co Ltd SIHG20N50C-E3 vs SSF20N50UH

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