-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SIHFRC20TR-GE3 by Vishay Intertechnologies
Overview of SIHFRC20TR-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHFRC20TR-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
42AJ0398
|
Newark | Mosfet N-Channel 600V |Vishay SIHFRC20TR-GE3 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.3290 / $0.3600 | Buy Now |
|
DISTI #
SIHFRC20TR-GE3
|
Avnet Americas | MOSFET N-CHANNEL 600V (Alt: SIHFRC20TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days | 0 |
|
$0.3055 | Buy Now |
|
DISTI #
78-SIHFRC20TR-GE3
|
Mouser Electronics | MOSFETs TO252 600V 2A N-CH MOSFET RoHS: Compliant | 1999 |
|
$0.3000 / $0.9100 | Buy Now |
|
|
Future Electronics | SIHFRC20 Series 600 V 2 A 4.4 Ohm Single N-Channel Power MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.2950 / $0.3150 | Buy Now |
|
|
Future Electronics | SIHFRC20 Series 600 V 2 A 4.4 Ohm Single N-Channel Power MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
|
$0.2950 / $0.3150 | Buy Now |
|
DISTI #
SIHFRC20TR-GE3
|
TTI | MOSFETs TO252 600V 2A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
|
$0.3000 / $0.3180 | Buy Now |
|
DISTI #
SIHFRC20TR-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 1.3A, Idm: 8A, 42W, DPAK,TO252 Min Qty: 1 | 0 |
|
$0.4680 / $0.8020 | RFQ |
|
DISTI #
SIHFRC20TR-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 600V 2A 3-Pin TO-252 T/R (Alt: SIHFRC20TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIHFRC20TR-GE3
SIHFRC20TR-GE3 CAD Models
SIHFRC20TR-GE3 Part Data Attributes
|
|
SIHFRC20TR-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHFRC20TR-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 74 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 4.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFRC20TR-GE3
This table gives cross-reference parts and alternative options found for SIHFRC20TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFRC20TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFRC20TRLPBF | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFRC20TR-GE3 vs IRFRC20TRLPBF |
| IRFRC20PBF | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFRC20TR-GE3 vs IRFRC20PBF |
| IRFRC20TRR | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | SIHFRC20TR-GE3 vs IRFRC20TRR |
| IRFRC20TR | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFRC20TR-GE3 vs IRFRC20TR |
| IRFRC20 | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFRC20TR-GE3 vs IRFRC20 |
| IRFRC20PBF | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFRC20TR-GE3 vs IRFRC20PBF |
| IRFRC20TRRPBF | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFRC20TR-GE3 vs IRFRC20TRRPBF |
| IRFRC20 | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | SIHFRC20TR-GE3 vs IRFRC20 |
| IRFRC20TRL | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFRC20TR-GE3 vs IRFRC20TRL |
| SIHFRC20TR-GE3 | TRANSISTOR 2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFRC20TR-GE3 vs SIHFRC20TR-GE3 |