Datasheets
SIHF540STRL-GE3 by:

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for SIHF540STRL-GE3 by Vishay Intertechnologies

Overview of SIHF540STRL-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIHF540STRL-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHF540STRL-GE3
Avnet Americas - Tape and Reel (Alt: SIHF540STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $1.6447
  • 1,600 $1.5919
  • 3,200 $1.5392
  • 4,800 $1.4769
  • 6,400 $1.4289
  • 8,000 $1.3618
  • 80,000 $1.2947
$1.2947 / $1.6447 Buy Now
DISTI # 78-SIHF540STRL-GE3
Mouser Electronics MOSFET 100V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant 0
  • 800 $1.2800
  • 4,800 $1.2300
$1.2300 / $1.2800 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 0
  • 800 $1.2800
$1.2800 Buy Now
Bristol Electronics   800
RFQ
Quest Components   640
  • 1 $3.8400
  • 339 $1.5840
  • 632 $1.4400
$1.4400 / $3.8400 Buy Now
DISTI # SIHF540STRL-GE3
TTI MOSFET 100V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $1.2700
  • 1,600 $1.2500
  • 2,400 $1.2200
  • 4,800 $1.2000
$1.2000 / $1.2700 Buy Now
DISTI # SIHF540STRL-GE3
Avnet Americas - Tape and Reel (Alt: SIHF540STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $1.6447
  • 1,600 $1.5919
  • 3,200 $1.5392
  • 4,800 $1.4769
  • 6,400 $1.4289
  • 8,000 $1.3618
  • 80,000 $1.2947
$1.2947 / $1.6447 Buy Now

Part Details for SIHF540STRL-GE3

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SIHF540STRL-GE3 Part Data Attributes:

SIHF540STRL-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF540STRL-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF540STRL-GE3

This table gives cross-reference parts and alternative options found for SIHF540STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF540STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540SPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540SPBF
IRF540STRLPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN Vishay Intertechnologies SIHF540STRL-GE3 vs IRF540STRLPBF
IRF540STRRPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF540STRL-GE3 vs IRF540STRRPBF
SIHF540S-GE3 TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF540STRL-GE3 vs SIHF540S-GE3
IRF540STRLPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540STRLPBF
IRF540SPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF540STRL-GE3 vs IRF540SPBF
SIHF540S-GE3 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies SIHF540STRL-GE3 vs SIHF540S-GE3
IRF540S Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix SIHF540STRL-GE3 vs IRF540S
IRF540STRRPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN Vishay Intertechnologies SIHF540STRL-GE3 vs IRF540STRRPBF
IRF540S 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC SIHF540STRL-GE3 vs IRF540S
Part Number Description Manufacturer Compare
IRF540STRRPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF540STRL-GE3 vs IRF540STRRPBF
SIHF540S-GE3 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies SIHF540STRL-GE3 vs SIHF540S-GE3
IRF540STRL Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540STRL
IRF540S 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC SIHF540STRL-GE3 vs IRF540S
IRF540SPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540SPBF
IRF540S Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix SIHF540STRL-GE3 vs IRF540S
IRF540S Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540S
IRF540STRRPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN International Rectifier SIHF540STRL-GE3 vs IRF540STRRPBF
IRF540S Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products SIHF540STRL-GE3 vs IRF540S
SIHF540S-GE3 TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF540STRL-GE3 vs SIHF540S-GE3

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