Part Details for SIHB12N50C-E3 by Vishay Siliconix
Overview of SIHB12N50C-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB12N50C-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70616559
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RS | SIHB12N50C-E3 N-channel MOSFET Transistor, 12 A, 500 V, 3-Pin D2PAK | Siliconix / Vishay SIHB12N50C-E3 RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
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$3.1100 / $3.6600 | RFQ |
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Bristol Electronics | 550 |
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RFQ | ||
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Quest Components | 440 |
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$3.2208 / $5.8560 | Buy Now |
Part Details for SIHB12N50C-E3
SIHB12N50C-E3 CAD Models
SIHB12N50C-E3 Part Data Attributes
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SIHB12N50C-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHB12N50C-E3
Vishay Siliconix
SiHB12N60E E Series Power MOSFET
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.555 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |