Part Details for SIHA11N80AE-GE3 by Vishay Intertechnologies
Overview of SIHA11N80AE-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SIHA11N80AE-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
80AK5260
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Newark | Mosfet, N-Ch, 800V, 8A, To-220Fp Rohs Compliant: Yes |Vishay SIHA11N80AE-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 980 |
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$1.2800 / $1.7800 | Buy Now |
|
DISTI #
SIHA11N80AE-GE3
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Avnet Americas | N-CHANNEL 800V (Alt: SIHA11N80AE-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days | 0 |
|
$0.7612 / $0.8087 | Buy Now |
|
DISTI #
78-SIHA11N80AE-GE3
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Mouser Electronics | MOSFETs N-CHANNEL 800V TO-220FP RoHS: Compliant | 2733 |
|
$0.8080 / $1.6200 | Buy Now |
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Future Electronics | 800V Thin-Lead 450 mΩ @ 10V TO-220 FULLPAK E Series Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 19 Weeks Container: Tube | 0Tube |
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$0.7900 / $0.9900 | Buy Now |
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Future Electronics | 800V Thin-Lead 450 mΩ @ 10V TO-220 FULLPAK E Series Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.7900 / $0.9900 | Buy Now |
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DISTI #
SIHA11N80AE-GE3
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TTI | MOSFETs N-CHANNEL 800V TO-220FP RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 1000 In Stock |
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$0.8100 | Buy Now |
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DISTI #
SIHA11N80AE-GE3
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TME | Transistor: N-MOSFET, unipolar, 800V, 5A, Idm: 22A, 31W, TO220FP Min Qty: 1 | 0 |
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$1.3300 / $1.9900 | RFQ |
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DISTI #
SIHA11N80AE-GE3
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EBV Elektronik | N-CHANNEL 800V (Alt: SIHA11N80AE-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHA11N80AE-GE3
SIHA11N80AE-GE3 CAD Models
SIHA11N80AE-GE3 Part Data Attributes
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SIHA11N80AE-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHA11N80AE-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 88 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 104 ns | |
| Turn-on Time-Max (ton) | 56 ns |