Datasheets
SIGC12T60SNCX1SA3 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE-2

Part Details for SIGC12T60SNCX1SA3 by Infineon Technologies AG

Overview of SIGC12T60SNCX1SA3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for SIGC12T60SNCX1SA3

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SIGC12T60SNCX1SA3 Part Data Attributes

SIGC12T60SNCX1SA3 Infineon Technologies AG
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SIGC12T60SNCX1SA3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, S-XUUC-N2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JESD-30 Code S-XUUC-N2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 329 ns
Turn-on Time-Nom (ton) 50 ns

Alternate Parts for SIGC12T60SNCX1SA3

This table gives cross-reference parts and alternative options found for SIGC12T60SNCX1SA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIGC12T60SNCX1SA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIGC12T60NCX1SA5 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.5 X 3.5 MM, DIE-2 Infineon Technologies AG SIGC12T60SNCX1SA3 vs SIGC12T60NCX1SA5
SIGC11T60SNCX1SA1 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.25 X 3.25 MM, DIE-2 Infineon Technologies AG SIGC12T60SNCX1SA3 vs SIGC11T60SNCX1SA1

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