There are no models available for this part yet.
Overview of SIE802DF-T1-E3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIE802DF-T1-E3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 4106 |
|
RFQ | ||||
Quest Components | 42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET | 3284 |
|
$1.8000 / $3.6000 | Buy Now | ||
DISTI #
SIE802DF-T1-E3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 60A, Idm: 100A Min Qty: 3000 | 0 |
|
$2.2500 | RFQ |
CAD Models for SIE802DF-T1-E3 by Vishay Intertechnologies
Part Data Attributes for SIE802DF-T1-E3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
ROHS COMPLIANT, LEADLESS, POLARPAK-10
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Avalanche Energy Rating (Eas)
|
125 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
42.7 A
|
Drain-source On Resistance-Max
|
0.0019 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-XDSO-N4
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
125 W
|
Pulsed Drain Current-Max (IDM)
|
100 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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