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Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0373
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Newark | Mosfet, Dual/P-Ch/20V/4.5A/Powerpak Sc70 Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6894 |
|
$0.4090 / $0.6550 | Buy Now |
DISTI #
63R6002
|
Newark | Mosfet Transistor Array, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.5A, On Resistance Rds(On):0.059Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.3520 | Buy Now |
DISTI #
15R4844
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Newark | Mosfet Transistor Array, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4.5A, Continuous Drain Current Id P Channel:4.5A Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2120 / $0.2820 | Buy Now |
DISTI #
SIA921EDJ-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1963 | Buy Now |
DISTI #
781-SIA921EDJ-GE3
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Mouser Electronics | MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 76501 |
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$0.2010 / $0.6100 | Buy Now |
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Future Electronics | MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1980 / $0.2100 | Buy Now |
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Future Electronics | MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$0.1980 / $0.2100 | Buy Now |
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Bristol Electronics | 2769 |
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RFQ | ||
DISTI #
SIA921EDJ-T1-GE3
|
TTI | MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 18000 In Stock |
|
$0.2000 / $0.2130 | Buy Now |
DISTI #
SIA921EDJ-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -20V, -4.5A, Idm: -15A, 5W Min Qty: 1 | 0 |
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$0.2960 / $0.6140 | RFQ |
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SIA921EDJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA921EDJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 7.8 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIA921EDJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA921EDJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIA921EDJ-T4-GE3 | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SIA921EDJ-T1-GE3 vs SIA921EDJ-T4-GE3 |