Part Details for SI7464DP-T1-E3 by Vishay Siliconix
Overview of SI7464DP-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI7464DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI7464DP-T1-E3CT-ND
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DigiKey | MOSFET N-CH 200V 1.8A PPAK SO-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2950 In Stock |
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$0.7625 / $2.6400 | Buy Now |
|
DISTI #
70026276
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RS | SI7464DP-T1-E3 N-channel MOSFET Transistor, 1.8 A, 200 V, 8-Pin SOIC | Siliconix / Vishay SI7464DP-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.2000 / $1.4100 | RFQ |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 200V, 0.24OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 148 |
|
$1.9500 / $4.5000 | Buy Now |
Part Details for SI7464DP-T1-E3
SI7464DP-T1-E3 CAD Models
SI7464DP-T1-E3 Part Data Attributes
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SI7464DP-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7464DP-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 200V 1.8A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 0.45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 50 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for SI7464DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7464DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7464DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7464DP-T1-E3 | Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 | Vishay Intertechnologies | SI7464DP-T1-E3 vs SI7464DP-T1-E3 |
| SI7464DP-T1-GE3 | Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 | Vishay Intertechnologies | SI7464DP-T1-E3 vs SI7464DP-T1-GE3 |