Datasheets
SI6426DQ-T1 by: Vishay Siliconix

Small Signal Field-Effect Transistor, 5.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SI6426DQ-T1 by Vishay Siliconix

Overview of SI6426DQ-T1 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Price & Stock for SI6426DQ-T1

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 7 21000
  • 7 $0.8250
  • 26 $0.5363
  • 95 $0.3094
  • 325 $0.2640
  • 702 $0.2310
  • 1,668 $0.2145
$0.2145 / $0.8250 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSSOP 16800
  • 1 $1.1000
  • 2,798 $0.2750
  • 5,456 $0.2420
$0.2420 / $1.1000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSSOP 1340
  • 1 $0.9000
  • 94 $0.4200
  • 477 $0.3750
$0.3750 / $0.9000 Buy Now

Part Details for SI6426DQ-T1

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SI6426DQ-T1 Part Data Attributes

SI6426DQ-T1 Vishay Siliconix
Buy Now Datasheet
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SI6426DQ-T1 Vishay Siliconix Small Signal Field-Effect Transistor, 5.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.4 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for SI6426DQ-T1

This table gives cross-reference parts and alternative options found for SI6426DQ-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI6426DQ-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDH831NX 5800mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments SI6426DQ-T1 vs NDH831NX
NDH831N Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI6426DQ-T1 vs NDH831N
NDH831NL99Z Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI6426DQ-T1 vs NDH831NL99Z
SI6466ADQ-T1-E3 TRANSISTOR 6800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix SI6426DQ-T1 vs SI6466ADQ-T1-E3
NDH831ND84Z Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI6426DQ-T1 vs NDH831ND84Z

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